Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Methods and systems for utilizing design data in combination with inspection data

A system for analyzing IC layouts and designs by calculating variations of a number of objects to be created on a semiconductor wafer as a result of different process conditions. The variations are analyzed to determine individual feature failures or to rank layout designs by their susceptibility to process variations. In one embodiment, the variations are represented by PV-bands having an inner edge that defines the smallest area in which an object will always print and an outer edge that defines the largest area in which an object will print under some process conditions.

Integrated circuit layout design methodology with process variation bands

In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

System and method for lithography simulation

A semiconductor device includes a substrate and a number of diffusion regions defined within the substrate. The diffusion regions are separated from each other by a non-active region of the substrate. The semiconductor device includes a number of linear gate electrode tracks defined to extend over the substrate in a single common direction. Each linear gate electrode track is defined by one or more linear gate electrode segments. Each linear gate electrode track that extends over both a diffusion region and a non-active region of the substrate is defined to minimize a separation distance between ends of adjacent linear gate electrode segments within the linear gate electrode track, while ensuring adequate electrical isolation between the adjacent linear gate electrode segments.

Dynamic array architecture

Optical proximity correction (OPC) and assist feature rules are generated using a process window (PW) analysis. A reference pitch is chosen and the mask bias is found that optimizes the process window. This can be done using standard process window analysis or through a weighted process window (WPW) analysis which accounts for focus and dose distributions that are expected in a real process. The WPW analysis gives not only the optimum mask bias, but also the center focus and dose conditions for the optimum process centering. A series of other pitches and mask biases are then analyzed by finding the common process window with the reference pitch. For the standard PW analysis, a common process window is found. For the WPW analysis, the WPW is computed at the center focus and dose conditions found for the reference pitch. If mask or lens errors are to be accounted for, then multiple structures can be included in the analysis. Once the common process windows for the mask features of interest have been computed, functional fits to the data can be found. Once the functional forms have been found for each of the OPC parameters, the rules table can be determined by solving for the spacings of interest in the design.

Method to determine optical proximity correction and assist feature rules which account for variations in mask dimensions

An improved technique for inspecting photomasks employs simulated images of the resist pattern. A simulated image of an original pattern is compared to a simulated image generated from a pattern captured from a photomask manufactured from the original pattern. Alternatively, simulated images generated from captured data from two different instances of the same original pattern formed in a photomask are compared.

Inspection technique of photomask

A computer-implemented method for matching parameters of outputs generated by a first and second process The first process generates a first output having a characteristic measurable by a first parameter, and the second process generates a second output having the characteristic measurable by a second parameter A computer having a processing unit and memory is provided The computer generates a first model of the first parameter for the first process and a second model of the second parameter for the second process The computer generates a first simulated output of the first process using the first model A correction, which is a function of the second model and which compensates for the effect of the second process on the second parameter, is applied to the first simulated output to obtain a corrected output The second process is applied to the corrected output to generate with the computer thereby a third output matching the first parameter of the first output

Method for multiple process parameter matching

A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.

Methods and apparatus for determining optimum exposure threshold for a given photolithographic model

A computer-implemented method for matching parameters of outputs generated by a first and second process. The first process generates a first output having a characteristic measurable by a first parameter, and the second process generates a second output having the characteristic measurable by a second parameter. A computer having a processing unit and memory is provided. The computer generates a first model of the first parameter for the first process and a second model of the second parameter for the second process. The computer generates a first simulated output of the first process using the first model. A correction, which is a function of the second model and which compensates for the effect of the second process on the second parameter, is applied to the first simulated output to obtain a corrected output. The second process is applied to the corrected output to generate with the computer thereby a third output matching the first parameter of the first output.

James Burdorf

Papers

Inspection technique of photomask

Method for multiple process parameter matching

Methods and apparatus for determining optimum exposure threshold for a given photolithographic model

System and method for process matching

Method of determining optimum exposure threshold for a given photolithographic model