Micron Technology

About: Micron Technology is a company organization based out in Boise, Idaho, United States. It is known for research contribution in the topics: Layer (electronics) & Substrate (printing). The organization has 8127 authors who have published 20935 publications receiving 430775 citations. The organization is also known as: Micron Technology, Inc..

Radio frequency data communications device

Abstract: A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

Variable-phase-shift-based RF-baseband codesign for MIMO antenna selection

Abstract: We introduce a novel soft antenna selection approach for multiple antenna systems through a joint design of both RF (radio frequency) and baseband signal processing. When only a limited number of frequency converters are available, conventional antenna selection schemes show severe performance degradation in most fading channels. To alleviate those degradations, we propose to adopt a transformation of the signals in the RF domain that requires only simple, variable phase shifters and combiners to reduce the number of RF chains. The constrained optimum design of these shifters, adapting to the channel state, is given in analytical form, which requires no search or iterations. The resulting system shows a significant performance advantage for both correlated and uncorrelated channels. The technique works for both transmitter and receiver design, which leads to the joint transceiver antenna selection. When only a single information stream is transmitted through the channel, the new design can achieve the same SNR gain as the full-complexity system while requiring, at most, two RF chains. With multiple information streams transmitted, it is demonstrated by computer experiments that the capacity performance is close to optimum.

Amplified, Frequency Swept Lasers for Frequency Domain Reflectometry and OCT Imaging : Design and Scaling Principles

Abstract: We demonstrate a high-speed, frequency swept, 1300 nm laser source for frequency domain reflectometry and OCT with Fourier domain/swept-source detection. The laser uses a fiber coupled, semiconductor amplifier and a tunable fiber Fabry-Perot filter. We present scaling principles which predict the maximum frequency sweep speed and trade offs in output power, noise and instantaneous linewidth performance. The use of an amplification stage for increasing output power and for spectral shaping is discussed in detail. The laser generates ~45 mW instantaneous peak power at 20 kHz sweep rates with a tuning range of ~120 nm full width. In frequency domain reflectometry and OCT applications the frequency swept laser achieves 108 dB sensitivity and ~10 mum axial resolution in tissue. We also present a fast algorithm for real time calibration of the fringe signal to equally spaced sampling in frequency for high speed OCT image preview.

RFID material tracking method and apparatus

Abstract: A method and apparatus for tracking items automatically is described. A passive RFID (Radio Frequency IDentification) tag is used with a material tracking system capable of real-time pinpoint location and identification of thousands of items in production and storage areas. Passive RFID tags are attached to the item to be tracked, remote sensing antennas are placed at each remote location to be monitored, interrogators with several antenna inputs are connected to the sensing antennas to multiplex the antenna signals, and a host computer communicates with the interrogators to determine item locations to an exacting measure.

Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process

Abstract: The process starts with a primary mask, which may be characterized as a pattern of parallel, photoresist strips having substantially vertical edges, each having a minimum feature width F, and being separated from neighboring strips by a minimum space width which is also approximately equal to F. From this primary mask, a set of expendable mandrel strips is created either directly or indirectly. The set of mandrel strips may be characterized as a pattern of parallel strips, each having a feature width of F/2, and with neighboring strips being spaced from one another by a space width equal to 3/2F. A conformal stringer layer is then deposited. The stringer layer material is selected such that it may be etched with a high degree of selectivity with regard to both the mandrel strips and an underlying layer which will ultimately be patterned using a resultant, reduced-pitch mask. The stringer layer is then anisotropically etched to the point where the top of each mandrel strip is exposed. The mandrel strips are then removed with an appropriate etch. A pattern of stringer strips remains which can then be used as a half-pitch mask to pattern the underlying layer. This process may also be repeated, starting with the half-pitch mask and creating a quarter-pitch mask, etc. As can be seen, this technique permits a reduction in the minimum pitch of the primary mask by a factor of 2-N (where N is an integer 1, 2, 3, . . . ).