A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

An interior rearview mirror system suitable for use in a vehicle includes an interior rearview mirror assembly having a mirror casing and a transflective reflective element. The transflective reflective element has an electrochromic active region, and a plurality of user input elements is disposed outside of the electrochromic active region and below the electrochromic active region. Each of the individual user input elements is a touch or proximity sensor. A plurality of display elements is disposed behind the transflective reflective element at the electrochromic active region, and each display element is selectively activated by activation of a respective user input element. Each of the individual display elements and its associated respective one of the individual user input elements are located local to one another such that a cognitive relationship between actuation by a user of a respective user input element and activation of its associated display element is established.

Interior rearview mirror system

The invention provides a laser beam machining method characterized by comprising the steps of mounting a protective tape (25) on the surface (3) of a wafer (1a), radiating laser light (L) by using the back (21) of a wafer (1a) as a laser light incidence plane with an optical converging point (P) positioned in a substrate (15) to thereby form a melt processing region (13) for melt processing by multiphoton absorption, forming, by means of the melt processing region (13), a cutting start region (8) on the side within a predetermined distance from the laser light incidence plane along a predetermined cutting line (5) on the wafer (1a), mounting an expand tape (23) on the back (21) of the wafer (1a), and stretching the expand tape (23) to thereby separate a plurality of chip-like portions (24) from each other that are formed by the wafer (1a) being cut with the cutting start region (8) used as the starting point.

Laser beam machining method

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Laser processing method and laser processing apparatus

Methods for ultrashort pulse laser processing of optically transparent materials. A method for scribing transparent materials uses ultrashort laser pulses to create multiple scribe features with a single pass of the laser beam across the material, with at least one of the scribe features being formed below the surface of the material. This enables clean breaking of transparent materials at a higher speed than conventional techniques. Slightly modifying the ultrashort pulse laser processing conditions produces sub-surface marks. When properly arranged, these marks are clearly visible with side-illumination and not clearly visible without side-illumination. In addition, a method for welding transparent materials uses ultrashort laser pulses to create a bond through localized heating. The ultrashort pulse duration causes nonlinear absorption of the laser radiation, and the high repetition rate of the laser causes pulse-to-pulse accumulation of heat within the materials. The laser is focused near the interface of the materials, generating a high energy fluence at the region to be welded. This minimizes damage to the rest of the material and enables fine weld lines.

Transparent material processing with an ultrashort pulse laser

A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Methods and systems for thermal-based laser processing a multi-material device

A precision, laser-based method and system for high-speed, sequential processing of material of targets within a field are disclosed that control the irradiation distribution pattern of imaged spots. For each spot, a laser beam is incident on a first anamorphic optical device and a second anamorphic optical device so that the beam is controllably modified into an elliptical irradiance pattern. The modified beam is propagated through a scanning optical system with an objective lens to image a controlled elliptical spot on the target. In one embodiment, the relative orientations of the devices along an optical axis are controlled to modify the beam irradiance pattern to obtain an elliptical shape while the absolute orientation of the devices controls the orientation of the elliptical spot.

High-speed, precision, laser-based method and system for processing material of one or more targets within a field

A laser-based system for processing target material within a microscopic region without causing undesirable changes in electrical or physical characteristics of at least one material surrounding the target material, the system includes a seed laser, an optical amplifier, and a beam delivery system. The seed laser for generating a sequence of laser pulses having a first pre-determined wavelength. The optical amplifier for amplifying at least a portion of the sequence of pulses to obtain an amplified sequence of output pulses. The beam delivery system for delivering and focusing at least one pulse of the amplified sequence of pulses onto the target material. The at least one output pulse having a pulse duration in the range of about (10) picoseconds to less than (1) nanosecond. The pulse duration being within a thermal processing range. The at least one focused output pulse having sufficient power density at a location within the target material to reduce the reflectivity of the target material and efficiently couple the focused output into the target material to remove the target material.

Laser-based system for memory link processing with picosecond lasers

A laser-based method of removing a target link structure of a circuit fabricated on a substrate includes generating a pulsed laser output at a pre-determined wavelength less than an absorption edge of the substrate. The laser output includes at least one pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond, the pulse duration being within a thermal laser processing range. The method also includes delivering and focusing the laser output onto the target link structure. The focused laser output has sufficient power density at a location within the target structure to reduce the reflectivity of the target structure and efficiently couple the focused laser output into the target structure to remove the link without damaging the substrate.

Laser-based method and system for memory link processing with picosecond lasers

A laser polarization control apparatus includes a polarization modifying device (24), such as a liquid crystal variable retarder, and a controller (18). The polarization modifying device receives a laser beam (12) and modifies the polarization of the beam. The controller adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the modified laser beam onto a workpiece that includes the structure to be processed by the laser beam.

James J. Cordingley

Papers

Methods and systems for thermal-based laser processing a multi-material device

High-speed, precision, laser-based method and system for processing material of one or more targets within a field

Laser-based system for memory link processing with picosecond lasers

Laser-based method and system for memory link processing with picosecond lasers

Controlling laser polarization