Science and technologies based on terahertz frequency electromagnetic radiation (100 GHz–30 THz) have developed rapidly over the last 30 years. For most of the 20th Century, terahertz radiation, then referred to as sub-millimeter wave or far-infrared radiation, was mainly utilized by astronomers and some spectroscopists. Following the development of laser based terahertz time-domain spectroscopy in the 1980s and 1990s the field of THz science and technology expanded rapidly, to the extent that it now touches many areas from fundamental science to 'real world' applications. For example THz radiation is being used to optimize materials for new solar cells, and may also be a key technology for the next generation of airport security scanners. While the field was emerging it was possible to keep track of all new developments, however now the field has grown so much that it is increasingly difficult to follow the diverse range of new discoveries and applications that are appearing. At this point in time, when the field of THz science and technology is moving from an emerging to a more established and interdisciplinary field, it is apt to present a roadmap to help identify the breadth and future directions of the field. The aim of this roadmap is to present a snapshot of the present state of THz science and technology in 2017, and provide an opinion on the challenges and opportunities that the future holds. To be able to achieve this aim, we have invited a group of international experts to write 18 sections that cover most of the key areas of THz science and technology. We hope that The 2017 Roadmap on THz science and technology will prove to be a useful resource by providing a wide ranging introduction to the capabilities of THz radiation for those outside or just entering the field as well as providing perspective and breadth for those who are well established. We also feel that this review should serve as a useful guide for government and funding agencies.

The 2016 terahertz science and technology roadmap

To cope with the high bandwidth requirements of wireless applications1, carrier frequencies are shifting towards the millimetre-wave and terahertz bands2–5. Conversely, data is normally transported to remote wireless antennas by optical fibres. Therefore, full transparency and flexibility to switch between optical and wireless domains would be desirable6,7. Here, we demonstrate a direct wireless-to-optical receiver in a transparent optical link. We successfully transmit 20 and 10 Gbit s−1 over wireless distances of 1 and 5 m, respectively, at a carrier frequency of 60 GHz. Key to the breakthrough is a plasmonic mixer directly mapping the wireless information onto optical signals. The plasmonic scheme with its subwavelength feature and pronounced field confinement provides a built-in field enhancement of up to 90,000 over the incident field in an ultra-compact and complementary metal-oxide–semiconductor compatible structure. The plasmonic mixer is not limited by electronic speed and thus compatible with future terahertz technologies. A direct wireless-to-optical receiver in a transparent optical link is achieved, thanks to a subwavelength two-dimensionally localized gap-plasmon mixer encoding wireless information directly onto optical signals.

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Microwave plasmonic mixer in a transparent fibre–wireless link

Current optical communication systems operating at the 1.55 μm wavelength band may not be able to continually satisfy the growing demand on data capacity within the next few years. Opening a new spectral window around the 2 μm wavelength with recently developed hollow-core photonic bandgap fiber and a thulium-doped fiber amplifier is a promising solution to increase transmission capacity due to the low-loss and wide-bandwidth properties of these components at this wavelength band. However, as a key component, the performance of current high-speed photodetectors at the 2 μm wavelength is still not comparable with those at the 1.55 μm wavelength band, which chokes the feasibility of the new spectral window. In this work, we demonstrate, for the first time to our knowledge, a high-speed uni-traveling carrier photodiode for 2 μm applications with InGaAs/GaAsSb type-II multiple quantum wells as the absorption region, which is lattice-matched to InP. The devices have the responsivity of 0.07 A/W at 2 μm wavelength, and the device with a 10 μm diameter shows a 3 dB bandwidth of 25 GHz at −3  V bias voltage. To the best of our knowledge, this device is the fastest photodiode among all group III-V and group IV photodetectors working in the 2 μm wavelength range.

High-speed uni-traveling carrier photodiode for 2 μm wavelength application

Optoelectronic signal processing offers great potential for generation and detection of ultra-broadband waveforms in the terahertz range (so-called T-waves). However, fabrication of the underlying devices still relies on complex processes using dedicated III–V semiconductor substrates. This severely restricts the application potential of current T-wave transmitters and receivers and impedes co-integration of these devices with advanced photonic signal processing circuits. Here, we demonstrate that these limitations can be overcome by plasmonic internal-photoemission detectors (PIPEDs). PIPEDs can be realized on the silicon photonic platform, which allows exploiting the enormous opportunities of the associated device portfolio. In our experiments, we demonstrate both T-wave signal generation and coherent detection at frequencies up to 1 THz. To prove the viability of our concept, we monolithically integrate PIPED transmitters and receivers on a common silicon chip and use them to measure the complex transfer impedance of an integrated T-wave device. Transmitters and receivers based on plasmonic internal-photoemission detectors are developed for optoelectronic terahertz signal processing and monolithically integrated on a silicon chip. Proof-of-concept experiments are demonstrated.

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Silicon–plasmonic integrated circuits for terahertz signal generation and coherent detection

Two-dimensional photonic crystal band gaps have been studied using terahertz time-domain spectroscopy We observe the effects of defect modes in both the amplitude and phase spectra These results are in reasonable agreement with calculations

Defect modes in photonic crystals studied using terahertz time-domain spectroscopy

High-speed photodiodes are a key element of numerous photonic systems. With the development of potential applications in the THz range such as sensing, spectroscopy, and wireless transmission, devices with integrated antenna covering the frequency range from 0.1 to 3 THz will become essential. In this paper, we discuss the development of uni-traveling carrier photodiodes with integrated antennas to address that need. In particular we develop the key elements to present a simple design tool for the efficient integration of the device with an antenna. We also present fabricated device results that show the highest figure of merit to date for photonic THz emitters. When integrated with well-matched antennas the devices have achieved record level of power up to 1 THz compared to other published photomixers. We also show that these devices can be used as receivers at frequencies up to 560 GHz with conversion losses of the order of 30 dB.

Antenna Integrated THz Uni-Traveling Carrier Photodiodes

Terahertz generation using high-speed photodiodes has found commercial application in many areas ranging across spectroscopy, imaging and communications. In this paper we discuss the optimization of high-speed photodiodes in terms of bandwidth and output power. We identify some of the main limitations in the generation of high output power in the Terahertz frequency band. We present a modelling tool for the numerical evaluation of antenna coupled uni-travelling carrier photodiodes and experimental evaluation of the fabricated designs. We also present a thermal analysis of the photodiodes alongside pulsed measurements of the output power saturation.

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Photodiodes for Terahertz Applications

Monolithic optoelectronic integrated circuits, OEICs are seen as key enabling technologies to minimal power loss criteria. Monolithic OEICs combine, on the same die, cutting-edge optical devices and high speed III-V electronics able to generate terahertz signal targeting beyond-5G networks. Computationally efficient compact models compatible with existing software tool and design flow are essential for timely and cost-effective OEIC achievement. The analog nature of photonic devices wholly justifies the use of methodologies alike the ones employed in electronic design automation, through implementation of accurate (and SPICE-compatible) compact models. This multidisciplinary work, describes an efficient compact model for Uni-Traveling Carrier photodiodes (UTC PD) which is a key component for OEICs. Its equations feature the UTC PD electronic transport and frequency response along with its photocurrent under applied optical power. It also dynamically takes into account the device junction temperature, accounting for the self-heating effect. Excellent agreement between model and measurements as well as model scalability (several geometries have been validated) has been achieved that marks the first demonstration of a multi-physics, computationally efficient and versatile compact model for UTC-PDs.

https://hal.archives-ouvertes.fr/hal-02651295/document

Efficient compact modelling of UTC-photodiode towards terahertz communication system design

A novel technique for high-resolution 1.5µm photonics-enabled terahertz (THz) spectroscopy using software control of the illumination spectral line shape (SLS) is presented. The technique enhances the performance of a continuous-wave THz spectrometer to reveal previously inaccessible details of closely spaced spectral peaks. We demonstrate the technique by performing spectroscopy on LiYF4:Ho3+, a material of interest for quantum science and technology, where we discriminate between inhomogeneous Gaussian and homogeneous Lorentzian contributions to absorption lines near 0.2 THz. Ultra-high-resolution ( 2×109 is achieved using an exact frequency spacing comb source in the optical communications band, with a custom uni-traveling-carrier photodiode mixer and coherent down-conversion detection. Software-defined time-domain modulation of one of the comb lines is demonstrated and used to resolve the sample SLS and to obtain a magnetic field-free readout of the electronuclear spectrum for the Ho3+ ions in LiYF4:Ho3+. In particular, homogeneous and inhomogeneous contributions to the spectrum are readily separated. The experiment reveals previously unmeasured information regarding the hyperfine structure of the first excited state in the 5I8 manifold complementing the results reported in Phys. Rev. B94, 205132 (2016)PRBMDO0163-182910.1103/PhysRevB.94.205132.

Ultra-high-resolution software-defined photonic terahertz spectroscopy

The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of GSMBE. The UTC epitaxial structure contains a 300 nm n-InP collection layer and a 300 nm n++-InGaAsP waveguide layer. UTC-PDs integrated with Coplanar Waveguides (CPW) exhibit 3 dB bandwidth greater than 65 GHz and output RF power of 1.1 dBm at 100 GHz. We also demonstrate accurate prediction of the absolute level of power radiated by our antenna integrated UTCs, between 200 GHz and 260 GHz, using 3d full-wave modelling and taking the UTC-to-antenna impedance match into account. Further, we present the first optical 3d full-wave modelling of waveguide UTCs, which provides a detailed insight into the coupling between a lensed optical fibre and the UTC chip.

James Seddon

Papers

Antenna Integrated THz Uni-Traveling Carrier Photodiodes

Photodiodes for Terahertz Applications

Efficient compact modelling of UTC-photodiode towards terahertz communication system design

Ultra-high-resolution software-defined photonic terahertz spectroscopy

High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy.