The invention provides a microfabrication process which may be used to manufacture a MEMS device. The process comprises depositing one or a stack of layers on a base layer, said one layer or an uppermost layer in said stack of layers being a sacrificial layer; patterning said one or a stack of layers to provide at least one aperture therethrough through which said base layer is exposed; depositing a photosensitive layer over said one or a stack of layers; and passing light through said at least one aperture to expose said photosensitive layer.

A method for fabricating a structure for a microelectromechanical systems (mems) device

An interferometric modulator manufactured according to a particular set of processing parameters may have a non-zero offset voltage. A process has been developed for modifying the processing parameters to shift the non-zero offset voltage closer to zero. For example, the process may involve identifying a set of processing parameters for manufacturing an interferometric modulator that results in a non-zero offset voltage for the interferometric modulator. The set of processing parameters may then be modified to shift the non-zero offset voltage closer to zero. For example, modifying the set of processing parameters may involve modifying one or more deposition parameters used to make the interferometric modulator, applying a current (e.g., a counteracting current) to the interferometric modulator, and/or annealing the interferometric modulator. Interferometric modulators made according to the set of modified processing parameters may have improved performance and/or simpler drive schemes.

Process for modifying offset voltage characteristics of an interferometric modulator

In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device

Controlling electromechanical behavior of structures within a microelectromechanical systems device

A structure of a micro electro mechanical system and a manufacturing method are provided, the structure and manufacturing method is adapted for an optical interference display cell. The structure of the optical interference display cell includes a first electrode, a second electrode and posts. The second electrode comprises a conductive layer covered by a material layer and is arranged about parallel with the first electrode. The support is located between the first plate and the second plate and a cavity is formed. In the release etch process of manufacturing the structure, the material layer protects the conductive layer from the damage by an etching reagent. The material layer also protects the conductive layer from the damage from the oxygen and moisture in the air.

Structure of a micro electro mechanical system and the manufacturing method thereof

An optical interference display unit with a first electrode, a second electrode and support structures located between the two electrodes is provided. The second electrode has at least a first material layer and a second material layer. At least one material layer of the two is made from conductive material and the second conductive layer is used as a mask while an etching process is performed to etch the first material layer to define the second electrode.

Interference display cell and fabrication method thereof

The present invention relates to an electrical field absorbing semiconductor optical modulator, more particularly, to a high speed semiconductor optical modulator and a fabricating method thereof. The present invention includes a high speed semiconductor optical modulator, the optical modulator formed by stacking an n-type light-wave guiding layer, a light absorbing layer, a p-type light-wave guiding layer, a p-type clad layer, and a p-type ohmic contact layer on a substrate successively, the optical modulator having a ridge structure wherein the optical modulator is an electric-field absorbing type, and wherein width W3 of the light absorbing layer is less than the width W1 of the p-type ohmic contact layer. Accordingly, the present invention enables to provide high speed optical modulation of tens of giga rate of which modulating characteristics are excellent by reducing contact resistance and capacitance, which are the major problems of ruining the characteristics of an optical modulator, simultaneously.

High speed semiconductor optical modulator and fabricating method thereof

PURPOSE: A method for manufacturing an optical modulator of an ultra-high speed semiconductor is to provide a superior modulation characteristic, by simultaneously reducing contact resistance and capacitance which are a cause decreasing a characteristic of the optical modulator. CONSTITUTION: An n-type optical waveguide layer(22), an optical absorbing layer(23), a p-type optical waveguide layer(24), a p-type clad layer(25) and a p-type ohmic contact layer(26) are sequentially formed on a substrate(21) to make a ridge structure. The p-type ohmic contact layer is etched to have a width of W1. The n-type optical waveguide layer, the optical absorbing layer, the p-type optical waveguide layer, the p-type clad layer and the p-type ohmic contact layer are vertically etched to have a width of W2. The optical absorbing layer is laterally etched to have a width of W3 narrower than W1.

Je Ha Kim

Papers

High speed semiconductor optical modulator and fabricating method thereof

Optical modulator of ultra-high speed semiconductor and manufacturing method thereof