Patent
High speed semiconductor optical modulator and fabricating method thereof
TLDR
In this paper, an electrical field absorbing semiconductor optical modulator and a fabricating method for high speed optical modulators are presented. But the present method is not suitable for high-speed optical modulation with high capacitance and contact resistance.Abstract:
The present invention relates to an electrical field absorbing semiconductor optical modulator, more particularly, to a high speed semiconductor optical modulator and a fabricating method thereof. The present invention includes a high speed semiconductor optical modulator, the optical modulator formed by stacking an n-type light-wave guiding layer, a light absorbing layer, a p-type light-wave guiding layer, a p-type clad layer, and a p-type ohmic contact layer on a substrate successively, the optical modulator having a ridge structure wherein the optical modulator is an electric-field absorbing type, and wherein width W3 of the light absorbing layer is less than the width W1 of the p-type ohmic contact layer. Accordingly, the present invention enables to provide high speed optical modulation of tens of giga rate of which modulating characteristics are excellent by reducing contact resistance and capacitance, which are the major problems of ruining the characteristics of an optical modulator, simultaneously.read more
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References
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Patent
Light emitting devices with layered III-V semiconductor structures
TL;DR: In this paper, a semiconductor light emitting device with an active region comprising a straggled quantum well layer and a cladding layer for confining carriers and light emissions is described.
Journal ArticleDOI
MQW electroabsorption optical modulator for 40 Gbit/s modulation
TL;DR: In this paper, an MQW electroabsorption optical modulator with waveguides for 40 Gbit/s modulation is presented, which shows a record modulation bandwidth of 50 GHz, low driving voltage of 2.8 V and a low insertion loss of 8 dB.
Journal ArticleDOI
Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology
R. Weinmann,D. Baums,U. Cebulla,H. Haisch,D. Kaiser,E. Kuhn,E. Lach,Klaus Satzke,J. Weber,P. Wiedemann,E. Zielinski +10 more
TL;DR: In this paper, a ridge waveguide technology with low-pressure MOVPE, reactive ion etching (RIE) for semiconductor etching and polyimide for planarization is presented.
Patent
Semiconductor optical device having an optical confinement structure
TL;DR: A planar semiconductor optical device for modulating an optical beam includes an active layer provided on a substrate as discussed by the authors, the active layer having a quantum structure and being laterally surrounded by an optical confinement region which has a refractive index smaller than the effective as discussed by the authors.
Patent
Semiconductor optical modulator
Tatemi Ido,Hirohisa Sano +1 more
TL;DR: In this paper, a passive region is provided on one side or both sides of a waveguide-type optical modulator to obtain a high-speed optical modulation package superior in mechanical strength, thermal characteristic, high-frequency characteristic, and extinction characteristic.