Self-referenced refractive index sensors allow more accurate measurements and reduce the influence of extraneous factors. This work proposed a high-sensitivity, self-referenced surface plasmon resonance sensor with Na grating and Au-ZnS composite grating. When Transverse Magnetic-polarized light is incident into the prism, three surface plasmon resonances are excited at the interface of Na-MgF2 grating and Au-ZnS grating. The first one is treated as the reference angle, the second and third are forward and backward surface plasmon resonance, respectively. Using the angular modulation, the single-dip sensitivities are 329.41 deg/RIU and 788.24 deg/RIU in the range of 1.330-1.347. To further improve the performance of the sensor, the double-dips method is adopted, and the average sensitivity in the range of 1.330-1.347 is 1117.65 deg/RIU, while the maximum reaches 4390 deg/RIU. Due to high sensitivity, a good figure of merit can be obtained even with a larger full width at half maximum of 3.30°. This proposed sensor provides potential application in the research of biomolecular detection and chemical testing.

Self-referenced refractive index sensor based on double-dips method with bimetal-dielectric and double-groove grating.

We report on a new class of ZnO/ZnS nanomaterials based on the wurtzite/sphalerite architecture with improved electronic properties. Semiconducting properties of pristine ZnO and ZnS compounds and mixed ZnO1−xSx nanomaterials have been investigated using ab initio methods. In particular, we present the results of our theoretical investigation on the electronic structure of the ZnO1−xSx (x = 0.20, 0.25, 0.33, 0.50, 0.60, 0.66, and 0.75) nanocrystalline polytypes (2H, 3C, 4H, 5H, 6H, 8H, 9R, 12R, and 15R) calculated using hybrid PBE0 and HSE06 functionals. The main observations are the possibility of alternative polytypic nanomaterials, the effects of structural features of such polytypic nanostructures on semiconducting properties of ZnO/ZnS nanomaterials, the ability to tune the band gap as a function of sulfur content, as well as the influence of the location of sulfur layers in the structure that can dramatically affect electronic properties. Our study opens new fields of ZnO/ZnS band gap engineering on a multi-scale level with possible applications in photovoltaics, light-emitting diodes, laser diodes, heterojunction solar cells, infrared detectors, thermoelectrics, or/and nanostructured ceramics.

https://www.mdpi.com/2079-4991/12/9/1595/pdf?version=1652325507

Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic Nanomaterials

The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by in situ transmission electron microscopy. We describe the shape and the change of shape of the solid gold nanoparticle during vapor-solid-solid growth. We show the balance between one monolayer and two monolayer steps, which characterizes the vapor-liquid-solid and vapor-solid-solid growth modes of ZnTe. We discuss the likely role of the mismatch strain and lattice coincidence between gold and ZnTe on the predominance of two monolayer steps during vapor-solid-solid growth and on the subsequent self-regulation of the step dynamics. Finally, the formation of an interface between CdTe and ZnTe is described. 

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Regulated Dynamics with Two Monolayer Steps in Vapor–Solid–Solid Growth of Nanowires

Electroactive membranes have the potential to address membrane fouling via electrokinetic phenomena. However, additional energy consumption and complex material design represent chief barriers to achieving sustainable and economically viable antifouling performance. Herein, we present a novel strategy for fabricating a piezoelectric antifouling polyvinylidene fluoride (PVDF) membrane (Pi-UFM) by integrating the ion-dipole interactions (NaCl coagulation bath) and mild poling (in situ electric field) into a one-step phase separation process. This Pi-UFM with an intact porous structure could be self-powered in a typical ultrafiltration (UF) process via the responsivity to pressure stimuli, where the dominant β-PVDF phase and the out-of-plane aligned dipoles were demonstrated to be critical to obtain piezoelectricity. By challenging with different feed solutions, the Pi-UFM achieved enhanced antifouling capacity for organic foulants even with high ionic strength, suggesting that electrostatic repulsion and hydration repulsion were behind the antifouling mechanism. Furthermore, the TMP-dependent output performance of the Pi-UFM in both air and water confirmed its ability for converting ambient mechanical energy to in situ surface potential (ζ), demonstrating that this antifouling performance was a result of the membrane electromechanical transducer actions. Therefore, this study provides useful insight and strategy to enable piezoelectric materials for membrane filtration applications with energy efficiency and extend functionalities.

Piezoelectric Polyvinylidene Fluoride Membranes with Self-Powered and Electrified Antifouling Performance in Pressure-Driven Ultrafiltration Processes.

ZnO/ZnS core/shell nanostructures, which are studied for diverse possible applications, ranging from semiconductors, photovoltaics, and light-emitting diodes (LED), to solar cells, infrared detectors, and thermoelectrics, were synthesized and characterized by XRD, HR-(S)TEM, and analytical TEM (EDX and EELS). Moreover, band-gap measurements of the ZnO/ZnS core/shell nanostructures have been performed using UV/Vis DRS. The experimental results were combined with theoretical modeling of ZnO/ZnS (hetero)structures and band structure calculations for ZnO/ZnS systems, yielding more insights into the properties of the nanoparticles. The ab initio calculations were performed using hybrid PBE0 and HSE06 functionals. The synthesized and characterized ZnO/ZnS core/shell materials show a unique three-phase composition, where the ZnO phase is dominant in the core region and, interestingly, the auxiliary ZnS compound occurs in two phases as wurtzite and sphalerite in the shell region. Moreover, theoretical ab initio calculations show advanced semiconducting properties and possible band-gap tuning in such ZnO/ZnS structures.

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Synthesis, Characterization, and Electronic Properties of ZnO/ZnS Core/Shell Nanostructures Investigated Using a Multidisciplinary Approach

Peculiar and unique growth mechanisms involved in semiconductor nanowires (NWs) pave the way to the achievement of new crystallographic phases and remarkable material properties, and hence, studying polytypism in semiconductor NWs arouses a strong interest for the next generation of electronic and photonic applications. In this context, the growth of ZnS nanowires has been investigated, as bulk ZnS compound exhibits numerous unstable polytypes at high temperatures, but their stable occurrence is highly anticipated in a nanowire due to its special quasi-dimensional shape and growth modes. In this work, the idea is to provide a change in the growth mechanism via the physical state of catalyst droplet (liquid or solid) and hence, study the induced structural modifications in ZnS nanowires. The HRTEM images of VLS (via liquid alloyed catalyst) grown ZnS NWs show periodic stacking faults, which is precisely identified as a stacking sequence of cubic or hexagonal individual planes leading to an astonishing 15R crystal polymorph. This crystallographic phase is observed for the first time in nanowires. Contrastingly, NWs grown with VSS (via solid catalyst) show crystal polytypes of zinc blende and wurtzite. We calculate and discuss the role of cohesive energies in the formation of such ZnS polytypes. Further, we present the selection rules for the crystallization of such 15R structure in NWs and discuss the involved VLS and VSS growth mechanisms leading to the formation of different crystal phases.

Jean-Michel Chauveau

Papers

Induced structural modifications in ZnS nanowires via physical state of catalyst: Highlights of 15R crystal phase