Showing papers by "Jenö Dr. Tihanyi published in 1978"

Opto-electronic sensor based on the principle of charge injection and method for making it

Abstract: The invention relates to an optoelectronic sensor with at least one sensor element according to the principle of charge injection (CID), the surface of a doped semiconductor body 1 two closely adjacent to each other and from the semiconductor surface insulated by a thin insulating layer 5, controllable via separate control lines electrode 4.10 face. According to the invention, the semiconductor body 1 includes on its surface under an electrode 10, a more doped region 6 of the type of semiconductor doping, which slightly into the underlying electrode 4 of the other semiconductor surface extends itself. As a result, between the two electrodes,. B. a row electrode and a column electrode, a narrow potential barrier generated. The charge optically generated by an electrode displaced under the other electrode, this potential barrier prevents backflow of the charge under the deflated electrode. This allows a floating reading can be eliminated on the column lines in the couplings of the row lines. Preferably, the more heavily doped region 6 (Fig. 1) tapers wedge-shaped at the other electrode 4, and is produced by implantation, in which the field oxide and the electrode 4 is used as an implantation mask, whose edges are bevelled.

Process for the generation of windows having stepped edges within material layers of insulating material or of material for electrodes for the production of an integrated semiconductor circuit and MIS field-effect transistor with short channel length produced by this process

Abstract: 1. Process for the production of stepped windows in layers consisting of insulating material (4) and electrode material (3) in the formation of an integrated semiconductor circuit, in which said layers are applied one above another on a semiconductor body or on a layer (2) arranged thereon, and are etched away with the aid of lacquer masks (5, 6) to such an extent that the lower layer (3) which is adjacent to the semiconductor body projects beyond the edge of the layer (4) which is arranged on top, characterized in that a single lacquer mask is used, and in that : - a) after the application of the layers (3, 4), the lacquer mask (6) is applied to the layer (4) which is arranged on the top, and the mask openings of the lacquer mask (6) are so selected that they lie above the windows which are to be etched into the lower layer (3), and are somewhat smaller than these windows ; b) subsequently, the upper layer (4) is selectively etched away through the mask opening, whereby the lacquer mask (6) is underetched by a predetermined length ; c) the lacquer mask (6), possibly after previous swelling, is heated above the flow point until it is deposited on the parts of the surface of the lower layer (3) exposed by the underetching ; and d) finally, the surfaces of the lower layer which are exposed by the lowered lacquer mask (5) are etched away.

Optoelectronic sensor according to the principle of carrier injection

Abstract: The invention relates to an optoelectronic sensor with at least one sensor element according to the principle of carrier injection (CID), whereby the surface of a doped semiconductor body is faced by two closely adjoining electrodes insulated from one another and from the semiconductor surface by a thin insulation layer that are controllable via separate control circuits. The semiconductor body contains a more strongly doped area having the type of the semiconductor doping on its surface below one of the electrodes, which area extends slightly into the semiconductor surface lying below the other electrode. Thereby, a narrow potential barrier is formed between the two electrodes, for example, between a line electrode and a column electrode. When an optically generated charge under one electrode is displaced under the other electrode, then this narrow potential barrier prevents a flow back of the charge under the discharged electrode. This makes a floating readout possible, in which the couplings-in of the line circuits onto the column circuits can be eliminated. The more strongly doped area above referred to preferably tapers wedge-shaped under the other electrode and is produced by means of implantation, whereby the field oxide and the electrode, whose edges are beveled, are used as the implantation mask.