Showing papers by "Jenö Dr. Tihanyi published in 1997"
Patent•
30 Jan 1997TL;DR: The claimed field effect-controlled semiconductor component has a drain zone of the first conduction type, at least one gate electrode made of polycrystalline silicon and insulated from the drain zone, and a source region of the second conduction types built into the drain region as mentioned in this paper.
Abstract: The claimed field effect-controlled semiconductor component has a drain zone of the first conduction type, at least one gate electrode made of polycrystalline silicon and insulated from the drain zone, and a source region of the second conduction type built into the drain zone. In addition, a trench structure is also formed in the drain zone; this can extend from the surface of the epitaxial layer down to the substrate layer, and contains an additional polysilicon magnetoresistor embedded in an oxide layer. The oxide surrounding the polysilicon magnetoresistor increases in thickness vertically towards the drain.
284 citations