Inorganic semiconductor nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating the size and dimensionality dependence of their properties for potential applications. The use of such nanostructures with tailored geometries as building blocks is also expected to play crucial roles in future nanodevices. Since the discovery of carbon nanotubes much attention has been paid to exploring the usage of inorganic semiconductor nanostructures as field-emitters due to their low work functions, high aspect ratios and mechanical stabilities, and high electrical and thermal conductivities. This article provides a comprehensive review of the state-of-the-art research activities in the field. It mainly focuses on the most widely studied inorganic nanostructures, such as ZnO, ZnS, Si, WO3, AlN, SiC, and their field-emission properties. We begin with a survey of inorganic semiconductor nanostructures and the field-emission principle, and then discuss the recent progresses on several kinds of important nanostructures and their field-emission characteristics in detail and overview some additional inorganic semiconducting nanomaterials in short. Finally, we conclude this review with some perspectives and outlook on the future developments in this area.

Inorganic semiconductor nanostructures and their field-emission applications

Recent progress in synthesis, properties and potential applications of SiC nanomaterials

Highly ordered CdS nanostructure arrays were successfully fabricated via a simple two-step metal-organic chemical vapor deposition process. Both stimulated emission and field-emission measurements were carried out in an attempt to understand the correlation between the morphologies, alignments, and emission performances of five ordered CdS nanostructure array types (well-aligned truncated nanocones, nanorods, cleft nanorods, quasi-aligned nanowires, and nanowires). The 1D CdS nanostructures of various types displayed notable differences in stimulated and field-emission performances. The stimulated emission strongly correlated with the structure alignment: the better the alignment, the lower the threshold. Both of the alignments and aspect ratios greatly affected the field-emission properties; the CdS emitters of higher aspect ratio and better alignment exhibited better field-emission performance. Thus the well-aligned CdS nanorod arrays had the lower threshold for stimulated emission, and quasi-aligned nanowire arrays produced the higher field-emission current and possessed the lower turn-on fields.

Morphology-dependent stimulated emission and field emission of ordered CdS nanostructure arrays

In-situ growth of SiC nanowire arrays on carbon fibers and their microwave absorption properties

One-dimensional SiC nanostructures: Designed growth, properties, and applications

Flexible field emission (FE) arrays have a wide range of applications in next generation low-cost, lightweight and wearable electronics, roll-up displays, and large-area circuits on curved objects, yet the growth of tapered, high-quality single-crystalline nanostructure-based emitters on flexible substrates with superior FE properties remains challenging and related work is limited. On the other hand, our recent studies have shown that silicon carbide (SiC) 1D nanostructures could meet nearly any stringent requirement for an ideal FE emitter. In this contribution, we report the growth of quasi-aligned, single-crystalline n-type doped (N-doped) 3C-SiC nanoneedles (3C-SiCNNs) on highly flexible carbon fabric via the catalyst assisted pyrolysis of polysilazane. The as-synthesized SiCNNs possess a tapered structure with tiny clear tips with sizes of several to tens of nanometers. The fabricated 3C-SiCNNs have extremely low emission turn-on fields (Eon) in the range of 0.5–1.6 V μm−1 with an average of 1.1 V μm−1, which is comparable to the lowest value ever reported for 1D nanostructure emitters that, however, are grown on rigid substrates. Specifically, our SiCNN arrays on carbon fabric are mechanically and electrically robust, and can withstand mechanical bending up to 500 times and still retain excellent FE performance with Eon of ∼1.1 V μm−1. The field-enhancement factor has been calculated to be 6.5 × 103. The superior FE properties can be attributed to the significant enhancements of the tapered unique morphology and N-doping of the SiCNNs. Calculations based on local density functional theory suggest that nitrogen dopants in the 3C-SiC nanostructure could favor a more localized impurity state near the conduction band edge, which improves the electron field emission. We strongly believe that the present work will provide a new insight into the fabrication of flexible field emission arrays with ultralow turn-on fields enhanced by both shape and doping.

Jiahao Li

Papers

Growth of n-type 3C-SiC nanoneedles on carbon fabric: toward extremely flexible field emission devices