scispace - formally typeset
Y

Youqiang Chen

Researcher at Tsinghua University

Publications -  6
Citations -  222

Youqiang Chen is an academic researcher from Tsinghua University. The author has contributed to research in topics: Doping & Nanowire. The author has an hindex of 5, co-authored 6 publications receiving 184 citations. Previous affiliations of Youqiang Chen include Qingdao University.

Papers
More filters
Journal ArticleDOI

Flexible Nitrogen Doped SiC Nanoarray for Ultrafast Capacitive Energy Storage.

TL;DR: It is found that the SC performance of SiCNW arrays can be substantially enhanced by nitrogen doping, which could favor a more localized impurity state near the conduction band edge that greatly improves the quantum capacitance and hence increases the bulk capacitanceand the high-power capability.
Journal ArticleDOI

P-type 3C-SiC nanowires and their optical and electrical transport properties

TL;DR: The Raman spectroscopy of the as-grown p-type wire indicates that the linewidth and peak intensity of LO-phonon bands are sensitive to temperature variations.
Journal ArticleDOI

Growth of n-type 3C-SiC nanoneedles on carbon fabric: toward extremely flexible field emission devices

TL;DR: In this paper, the authors reported the growth of quasi-aligned, single-crystalline n-type doped (N-doped) 3C-SiC nanoneedles on highly flexible carbon fabric via the catalyst assisted pyrolysis of polysilazane.
Journal ArticleDOI

Multi-component self-assembled anti-tumor nano-vaccines based on MUC1 glycopeptides

TL;DR: Novel multi-component self-assembled nano-vaccines containing both Pam3CSK4 and CpG were developed for the first time and could effectively activate the macrophages in vitro and elicit strong antibody immune responses and anti-tumor immune responses in vivo.
Journal ArticleDOI

High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire

TL;DR: For the first time, p-type FETs are fabricated using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure with an extremely high on/off ratio, 10(3), at Vds = -5 V.