A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Resist composition and patterning process

After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.

Pattern formation method

Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Methods of forming electronic devices

A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

Method of forming patterns

The present invention relates to an aqueous composition for coating over a photoresist pattern comprising a first water soluble compound comprising at least a silicon moiety and at least one amino group, and a second compound comprising at least 1 carboxylic acid group. The invention further relates to processes for using the novel invention.

Composition for Coating over a Photoresist Pattern

PROBLEM TO BE SOLVED: To perform a pattern formation exceeding the wavelength limit in fining of a separating pattern or hole pattern by using a fine pattern forming material which mainly contains a water-soluble resin, a mixture of water-soluble resins, or a copolymer of water-soluble resins, and causes a crosslinking reaction in the presence of acid. SOLUTION: A fine pattern forming material which mainly contains one water-soluble resin, a mixture of two or more of water-soluble resins, or a copolymer of two or more of water-soluble resins, and causes a crosslinking reaction in the presence of acid is used. In the manufacture of a semiconductor device, a resist pattern 1a containing a material generating acid by exposure is covered with a resist 2 containing a material crosslinked in the presence of acid. The acid is generated in the resist pattern 1a by heating or exposure, and a crosslinked layer 4 generated on the interface is formed as the covering layer of the resist pattern 1a to thicken the resist pattern 1a. Thus, the resist hole diameter and the separating width can be reduced.

Fine pattern forming material, manufacture of semiconductor device using same, and semiconductor device

PROBLEM TO BE SOLVED: To provide a fine pattern forming material and method which prevent the occurrence of pattern defects such as defective opening independently of acid components presence in the air in a clean room in which processing is carried out and do not cause an error in opening dimensions due to a partial increase of the thickness of a crosslinked film (framing amount). SOLUTION: The top of a base resist pattern capable of supplying an acid is coated with a framing material which is crosslinked when the acid is supplied to the material. A prescribed amount of a weak acid or a compound which generates an acid by thermal decomposition has been added to the framing material. The acid supplied by heating is transferred from the inside of the base resist pattern to the inside of the framing material and a crosslinked layer produced at the interface is formed as a layer coating the base resist pattern to thicken the resist pattern and to reduce the hole diameter and separation width of the resist.

Fine pattern forming material and method for producing semiconductor device using the same

PROBLEM TO BE SOLVED: To solve the problem that conventionally the thickness of a resist film is reduced during pattern formation and satisfactory resistance to etching is not ensured in a subsequent dry etching step in a lithography utilizing pattern reduction although the lithography can form a fine pattern which exceeds the resolution limit of conventional photolithography. SOLUTION: A resist pattern is coated with a first upper layer film containing acid components, a second upper layer film containing base components being formed on the first upper layer film, and heat treatment is carried out to diffuse the acid components into the resist pattern and the base components into the first upper layer film. The acid components are neutralized with the base components, in the vicinity of the interface between the first and second upper layer films while forming a dissolved layer in the resist pattern, and the dissolved layer is removed to reduce the pattern width.

Fine pattern forming method, fine pattern forming material and method for producing semiconductor device using the method

PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern having a sufficiently-high water-shedding property required in a liquid immesion exposure and a suppressive effect for an exfoliation of a film, and to provide a semiconductor device manufactured by the method. SOLUTION: The embodiment of this invention comprises the steps of arranging an objective lens on a substrate of the semiconductor device with a film to be processed; and forming the resist pattern by the liquid immersion exposure for forming the liquid film between the objective lens and the substrate to exposure. The substrate processed by a water-shedding chemical comprising at least the water shedding agent and the solvent is exposed. COPYRIGHT: (C)2009,JPO&INPIT

Method for forming resist pattern, and semiconductor device manufactured by the method

PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device by which the occurrence of residue is prevented, a very fine pattern is formed and pattern shape and size uniformity in a surface are further enhanced. SOLUTION: A 1st resist pattern capable of generating an acid is formed on a semiconductor substrate, a 2nd resist which causes a crosslinking reaction in the presence of the acid is applied on the 1st resist pattern and a crosslinked film is formed in the 2nd resist by supplying the acid from the 1st resist pattern. The uncrosslinked part of the 2nd resist is dissolved and removed using an aqueous solution to form a 2nd resist pattern, this 2nd resist pattern forming step is repeated plural times and the semiconductor substrate is etched using the resulting 2nd resist pattern as a mask to produce the objective semiconductor device. COPYRIGHT: (C)2000,JPO

健夫石橋

Papers

Fine pattern forming material, manufacture of semiconductor device using same, and semiconductor device

Fine pattern forming material and method for producing semiconductor device using the same

Fine pattern forming method, fine pattern forming material and method for producing semiconductor device using the method

Method for forming resist pattern, and semiconductor device manufactured by the method

Production of semiconductor device using fine pattern forming material and semiconductor device

健夫 石橋

Papers

Fine pattern forming material, manufacture of semiconductor device using same, and semiconductor device

Fine pattern forming material and method for producing semiconductor device using the same

Fine pattern forming method, fine pattern forming material and method for producing semiconductor device using the method

Method for forming resist pattern, and semiconductor device manufactured by the method

Production of semiconductor device using fine pattern forming material and semiconductor device

健夫石橋