We have developed a nanowire nanogenerator that is driven by an ultrasonic wave to produce continuous direct-current output. The nanogenerator was fabricated with vertically aligned zinc oxide nanowire arrays that were placed beneath a zigzag metal electrode with a small gap. The wave drives the electrode up and down to bend and/or vibrate the nanowires. A piezoelectric-semiconducting coupling process converts mechanical energy into electricity. The zigzag electrode acts as an array of parallel integrated metal tips that simultaneously and continuously create, collect, and output electricity from all of the nanowires. The approach presents an adaptable, mobile, and cost-effective technology for harvesting energy from the environment, and it offers a potential solution for powering nanodevices and nanosystems.

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Direct-current nanogenerator driven by ultrasonic waves

All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.

Nanowire transistors without junctions

Human skin is a remarkable organ. It consists of an integrated, stretchable network of sensors that relay information about tactile and thermal stimuli to the brain, allowing us to maneuver within our environment safely and effectively. Interest in large-area networks of electronic devices inspired by human skin is motivated by the promise of creating autonomous intelligent robots and biomimetic prosthetics, among other applications. The development of electronic networks comprised of flexible, stretchable, and robust devices that are compatible with large-area implementation and integrated with multiple functionalities is a testament to the progress in developing an electronic skin (e-skin) akin to human skin. E-skins are already capable of providing augmented performance over their organic counterpart, both in superior spatial resolution and thermal sensitivity. They could be further improved through the incorporation of additional functionalities (e.g., chemical and biological sensing) and desired properties (e.g., biodegradability and self-powering). Continued rapid progress in this area is promising for the development of a fully integrated e-skin in the near future.

25th Anniversary Article: The Evolution of Electronic Skin (E-Skin): A Brief History, Design Considerations, and Recent Progress

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

http://science.sciencemag.org/content/sci/311/5758/208.full.pdf

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

This thesis explores transport phenomena in nanochannels on a chip. Fundamental nanofluidic ionic studies form the basis for novel separation and preconcentration applications for proteomic purposes. The measurements were performed with 50-nm-high 1D nanochannels, which are easily accessible from both sides by two microchannels. Nanometer characteristic apertures were manufactured in the bonded structure of Pyrex-amorphous silicon – Pyrex, in which the thickness of the amorphous silicon layer serves as a spacer to define the height of the nanochannels. The geometry of the nanometer-sized apertures is well defined, which simplifies the modeling of the transport across them. Compared to biological pores, the present nanochannels in Pyrex offer increased stability. Fundamental characteristics of nanometer-sized apertures were obtained by impedance spectroscopy measurements of the nanochannel at different ionic strengths and pH values. A conductance plateau (on a log-log scale) was modeled and measured, establishing due to the dominance of the surface charge density in the nanochannels, which induces an excess of mobile counterions to maintain electroneutrality. The nanochannel conductance can be regulated at low ionic strengths by pH adjustment, and by an external voltage applied on the chip to change the zeta potential. This field-effect allows the regulation of ionic flow which can be exploited for the fabrication of nanofluidic devices. Fluorescence measurements confirm that 50-nm-high nanochannels show an exclusion of co-ions and an enrichment of counterions at low ionic strengths. This permselectivity is related to the increasing thickness of the electrical double layer (EDL) with decreasing salt concentrations, which results in an EDL overlap in an aperture if the height of the nanochannel and the thickness of the EDL are comparable in size. The diffusive transport of charged species and therefore the exclusion-enrichment effect was described with a simple model based on the Poisson-Boltzmann equation. The negatively charged Pyrex surface of the nanometer characteristic apertures can be inversed with chemical surface pretreatments, resulting in an exclusion of cations and an enrichment of anions. When a pressure gradient is applied across the nanochannels, charged molecules are electrostatically rejected at the entrance of the nanometer-sized apertures, which can be used for separation processes. Proteomic applications are presented such as the separation and preconcentration of proteins. The diffusion of Lectin proteins with different isoelectric points and very similar compositions were controlled by regulating the pH value of the buffer. When the proteins are neutral at their pI value, the diffusion coefficient is maximal because the biomolecules does not interact electrostatically with the charged surfaces of the nanochannel. This led to a fast separation of three Lectin proteins across the nanochannel. The pI values measured in this experiment are slightly shifted compared to the values obtained with isoelectric focusing because of reversible adsorption of proteins on the walls which affects the pH value in the nanochannel. An important application in the proteomic field is the preconcentration of biomolecules. By applying an electric field across the nanochannel, anionic and cationic analytes were preconcentrated on the cathodic side of the nanometer-sized aperture whereas on the anodic side depletion of ions was observed. This is due to concentration polarization, a complex of effects related to the formation of ionic concentration gradients in the electrolyte solution adjacent to an ion-selective interface. It was measured that the preconcentration factor increased with the net charge of the molecule, leading to a preconcentration factor of > 600 for rGFP proteins in 9 minutes. Such preconcentrations are important in micro total analysis systems to achieve increased detection signals of analytes contained in dilute solutions. Compared to cylindrical pores, our fabrication process allows the realization of nanochannels on a chip in which the exclusion-enrichment effect and a big flux across the nanometer-sized aperture can be achieved, showing the interest for possible micro total analysis system applications. The described exclusion-enrichment effect as well as concentration polarization play an important role in transport phenomena in nanofluidics. The appendix includes preliminary investigations in DNA molecule separation and fluorescence correlation spectroscopy measurements, which allows investigating the behavior of molecules in the nanochannel itself.

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Transport phenomena in nanofluidics

Field-effect transistors (FETs) based on semi-conductor nanowires could one day replace standard silicon MOSFETs in miniature electronic circuits. MOSFETs, or metal-oxide semiconductor field-effect transistors, are a type of transistor used for high-speed switching and in a computer's integrated circuits. A specially designed nanowire with a germanium shell and silicon core has shown promise as a nanometre-scale field-effect transistor: it has a near-perfect channel for electronic conduction. Now, in transistor configuration, this germanium/silicon nanowire is shown to have properties including high conductance and short switching time delay that are better than state-of-the-art silicon MOSFETs. In a transistor configuration, a new germanium/silicon nanowire has characteristics such as conductance, on-current and switching time delay that are better than those of state-of-the-art silicon metal-oxide-semiconductor field-effect transitors. Semiconducting carbon nanotubes1,2 and nanowires3 are potential alternatives to planar metal-oxide-semiconductor field-effect transistors (MOSFETs)4 owing, for example, to their unique electronic structure and reduced carrier scattering caused by one-dimensional quantum confinement effects1,5. Studies have demonstrated long carrier mean free paths at room temperature in both carbon nanotubes1,6 and Ge/Si core/shell nanowires7. In the case of carbon nanotube FETs, devices have been fabricated that work close to the ballistic limit8. Applications of high-performance carbon nanotube FETs have been hindered, however, by difficulties in producing uniform semiconducting nanotubes, a factor not limiting nanowires, which have been prepared with reproducible electronic properties in high yield as required for large-scale integrated systems3,9,10. Yet whether nanowire field-effect transistors (NWFETs) can indeed outperform their planar counterparts is still unclear4. Here we report studies on Ge/Si core/shell nanowire heterostructures configured as FETs using high-κ dielectrics in a top-gate geometry. The clean one-dimensional hole-gas in the Ge/Si nanowire heterostructures7 and enhanced gate coupling with high-κ dielectrics give high-performance FETs values of the scaled transconductance (3.3 mS µm-1) and on-current (2.1 mA µm-1) that are three to four times greater than state-of-the-art MOSFETs and are the highest obtained on NWFETs. Furthermore, comparison of the intrinsic switching delay, τ = CV/I, which represents a key metric for device applications4,11, shows that the performance of Ge/Si NWFETs is comparable to similar length carbon nanotube FETs and substantially exceeds the length-dependent scaling of planar silicon MOSFETs.

Ge/Si nanowire heterostructures as high-performance field-effect transistors

https://cyberleninka.org/article/n/148078.pdf

Nanowire electronic and optoelectronic devices

Substantial effort has been placed on developing semiconducting carbon nanotubes and nanowires as building blocks for electronic devices--such as field-effect transistors--that could replace conventional silicon transistors in hybrid electronics or lead to stand-alone nanosystems. Attaching electric contacts to individual devices is a first step towards integration, and this step has been addressed using lithographically defined metal electrodes. Yet, these metal contacts define a size scale that is much larger than the nanometre-scale building blocks, thus limiting many potential advantages. Here we report an integrated contact and interconnection solution that overcomes this size constraint through selective transformation of silicon nanowires into metallic nickel silicide (NiSi) nanowires. Electrical measurements show that the single crystal nickel silicide nanowires have ideal resistivities of about 10 microOmega cm and remarkably high failure-current densities, >10(8) A cm(-2). In addition, we demonstrate the fabrication of nickel silicide/silicon (NiSi/Si) nanowire heterostructures with atomically sharp metal-semiconductor interfaces. We produce field-effect transistors based on those heterostructures in which the source-drain contacts are defined by the metallic NiSi nanowire regions. Our approach is fully compatible with conventional planar silicon electronics and extendable to the 10-nm scale using a crossed-nanowire architecture.

Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures

Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high-performance devices. The analogous development of one-dimensional (1D) electron or hole gas systems through controlled growth on 1D nanostructure substrates, which could open up opportunities beyond existing carbon nanotube and nanowire systems, has not been realized. Here, we report the synthesis and transport studies of a 1D hole gas system based on a free-standing germanium/silicon (Ge/Si) core/shell nanowire heterostructure. Room temperature electrical transport measurements clearly show hole accumulation in undoped Ge/Si nanowire heterostructures, in contrast to control experiments on single-component nanowires. Low-temperature studies show well-controlled Coulomb blockade oscillations when the Si shell serves as a tunnel barrier to the hole gas in the Ge channel. Transparent contacts to the hole gas also have been reproducibly achieved by thermal annealing. In such devices, we observe conductance quantization at low temperatures, corresponding to ballistic transport through 1D subbands, where the measured subband energy spacings agree with calculations for a cylindrical confinement potential. In addition, we observe a “0.7 structure,” which has been attributed to spontaneous spin polarization, suggesting the universality of this phenomenon in interacting 1D systems. Lastly, the conductance exhibits little temperature dependence, consistent with our calculation of reduced backscattering in this 1D system, and suggests that transport is ballistic even at room temperature.

https://www.pnas.org/content/pnas/102/29/10046.full.pdf

One-dimensional hole gas in germanium/silicon nanowire heterostructures

We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high electron mobility transistors (HEMTs). The radial nanowire heterostructures were prepared by sequential shell growth immediately following nanowire elongation using metal−organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/AlN/AlGaN radial nanowire heterostructures are dislocation-free single crystals. In addition, the thicknesses and compositions of the individual AlN and AlGaN shells were unambiguously identified using cross-sectional high-angle annular darkfield scanning transmission electron microscopy (HAADF-STEM). Transport measurements carried out on GaN/AlN/AlGaN and GaN nanowires prepared using similar conditions demonstrate the existence of electron gas in the undoped GaN/AlN/AlGaN nanowire heterostructures and also yield an intrinsic electron mobility of 3100 cm2/Vs and 21 000 cm2/Vs at room temperature and 5 K,...

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Jie Xiang

Papers

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Nanowire electronic and optoelectronic devices

Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures

One-dimensional hole gas in germanium/silicon nanowire heterostructures

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors