An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An organic light-emitting display includes a first substrate which includes a pixel region, and an encapsulation region which surrounds the pixel region, an organic light-emitting device which is located in the pixel region, a sealant which is located in the encapsulation region, and a dummy metal which is interposed between the first substrate and the sealant, where the encapsulation region includes a first encapsulation region and a second encapsulation region which is adjacent to the first encapsulation region, and the dummy metal is located in the first encapsulation region.

Organic light emitting display

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

Embodiments of the present invention provide an in-cell touch panel and a display device to decrease the influence of the touch driving electrode in the in-cell touch panel on image display. The in-cell touch panel includes an upper substrate and a lower substrate opposite to each other, and includes a plurality of touch sensing electrodes provided on the upper substrate and a plurality of touch driving electrodes provided on the lower substrate, wherein the touch sensing electrodes are laterally distributed, and the touch driving electrodes are longitudinally distributed; wherein the touch sensing electrodes include one or a plurality of touch sensing sub-electrodes which are parallel to each other and distributed laterally, and the plurality of touch sensing sub-electrodes are in parallel connection therebetween.

In-cell touch panel and display device

A liquid crystal display device and a method of manufacturing the same. The liquid crystal display device includes a plurality of pixel cells on a substrate and a common voltage line. The common voltage line provides a common voltage to the pixel cells, and includes first to third s interconnection patterns which are sequentially stacked over the substrate. Each of the pixel cells includes a storage capacitor which includes a lower electrode, and an upper electrode over the lower electrode. The second interconnection pattern includes the same material as a material of the upper electrode, and is formed in the same process as a process of the upper electrode.

Liquid crystal display device and method of manufacturing the same

Disclosed are a liquid crystal display device which reduces the number of masks and improves an aperture ratio, and a method for fabricating the same. The liquid crystal display device includes gate and data lines perpendicularly intersecting on a substrate having pixel and pad parts; a thin film transistor on the substrate at the intersection of the gate and data lines; a pixel electrode on the substrate at the pixel part and connected directly to a drain electrode of the thin film transistor; an insulating film on the overall surface of the substrate including the pixel electrode and the thin film transistor; an organic film on the insulating film over the thin film transistor and the data line; and a common electrode of slit shapes overlapping the pixel electrode such that the insulating film is interposed between the common electrode and the pixel electrode.

Liquid crystal display device and method for fabricating the same

An array substrate for an FFS mode LCD device includes a gate line and a gate pad electrode on a substrate; a common line parallel to the gate line; a data line extending along a second direction in a display area and a data pad electrode disposing in a non-display area; a thin film transistor electrically connected to the gate and data lines; a first passivation layer covering the thin film transistor and the data line; a second passivation layer on the first passivation layer and having a first thickness in the display area and a second thickness in the non-display area; a common electrode on the second passivation layer and connected to the common line; a third passivation layer on the common electrode; and a pixel electrode, a gate auxiliary pad electrode and a data auxiliary pad electrode on the third passivation layer.

Jin-hee Jang

Papers

Liquid crystal display device and method for fabricating the same

Array substrate for fringe field switching mode liquid crystal display device and method of fabricating the same