Jino Im

TL;DR: The perovskite compound CsPbBr3 as mentioned in this paper is a direct band gap semiconductor which meets most of the requirements for successful detection of X and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials.

TL;DR: Ultraviolet damage in perovskite photovoltaics induced by TiO2 in the electron-transporting layer can be avoided with La-doped BaSnO3, and a low-temperature colloidal method for depositing La- doped Ba SnO3 films as a replacement forTiO2 is reported to reduce such ultraviolet-induced damage.

TL;DR: The synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI(3), coupled with ab initio first-principles density functional theory (DFT) calculations are described.

TL;DR: A theoretical investigation of Rashba band splitting in ferroelectric halide perovskite materials indicates that and Rashba bands directly coupled to ferro electric polarization emerge at the valence and conduction band edges, respectively.

TL;DR: In this article, an above-band-gap excitonic photoluminescence (PL) band is seen in both CPs and CPs with perovskite structures.