Showing papers by "Jitendra Kumar published in 1994"

Thermal cycling, DLTS, and PEC studies on LEC gallium arsenide

Abstract: This paper discusses the growth of gallium arsenide single crystals using the LEC technique. The Semi-insulating gallium arsenide was studied. The defect investigations were made by DLTS and etching studies. The variation of deep level concentration along the wafer was estimated using DLTS. The fabrication and efficiency of the PEC Solar cells are also reported.

Structural and mechanical properties of ion implanted GaAs and InP single crystals grown by the liquid encapsulated Czochralski technique

Abstract: Ion implantation studies were carried out on liquid encapsulated Czochralski grown GaAs and InP single crystals. The hardness of samples irradiated at varying dosages was studied. The irradiated samples were characterized structurally by etching studies and electrically by I–V measurements. Double-crystal X-ray diffractometry was used to study the damage caused by ion implantation.

Photoluminescence investigations on liquid encapsulated czochralski grown gallium arsenide

Abstract: The growth aspects of 50 mm diameter gallium arsenide single crystals using LEC technique are presented. Defect investigations are made using photoluminescence studies. Photoluminescence studies on the wafers reveal the presence of the EL2 level, the presence of transition metal impurity copper which cannot be eliminated by surface treatments, and the presence of carbon. Photoluminescence scans are also obtained at room temperature to study the uniformity. The presence of carbon is also revealed by FTIR measurements.