J
Jitske Trevor
Researcher at Applied Materials
Publications - 5
Citations - 271
Jitske Trevor is an academic researcher from Applied Materials. The author has contributed to research in topics: Etching (microfabrication) & Plasma etching. The author has an hindex of 4, co-authored 5 publications receiving 271 citations.
Papers
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Patent
Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of (CH3F or CH2F2) and CF4 and O2
TL;DR: In this article, a chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxide (SiO) was proposed, using at least one of a CH 3 F/CF 4 /O 2 recipe.
Patent
Sidewall polymer forming gas additives for etching processes
Raney Williams,Jeffrey D. Chinn,Jitske Trevor,Thorsten Lill,Padmapani Nallan,Tamas Varga,Herve Mace +6 more
TL;DR: In this paper, a process of reducing critical dimension (CD) microloading in dense and isolated regions of etched features of silicon-containing material on a substrate uses a plasma of an etchant gas and an additive gas.
Patent
Substrate monitoring method and apparatus
TL;DR: In this paper, a substrate processing apparatus comprises a chamber 28 capable of processing a substrate 20 and a radiation source 58 providing radiation that is at least partially reflected from the substrate in the chamber.
Patent
Method for etching polysilicon to have a smooth surface
TL;DR: In this article, during a polysilicon etch back, a controlled amount of oxygen (O2) is added to the plasma generation feed gases, to reduce pitting of the etched back poly silicon surface.
Patent
Selective plasma etching of silicon nitride coexisting with silicon or silicon oxide using methyl fluoride or ethyl difluoride and mixture of tetrafluoro-carbon and oxygen
Cynthia B. Brooks,Ajey M. Joshi,Walter R. Merry,Gladys D. Quinones,Jitske Trevor,エム. ジョシ アジェイ,メリー ウォルター,ディー. クインオネス グラディス,トレヴォア ジツケ,ビー. ブルックス シンシア +9 more
TL;DR: In this paper, the inflow of each component of the input recipe is mapped to find a setting that achieves both a high nitride etch rate and a high selectivity to SiN material.