Showing papers by "Jiwoong Park published in 2001"
TL;DR: In this article, the authors used field effect doping to study both electron-n and hole-p type conduction in a semiconducting carbon nanotube and found that the ends of the tube remain p-type due to doping by the metal contacts.
Abstract: We use field effect doping to study both electron- (n) and hole- (p) type conduction in a semiconducting carbon nanotube. We find that, in the n-type region, the ends of the tube remain p- type due to doping by the metal contacts. As a result, a p–n junction forms near the contact, creating a small, p-type quantum dot between the p–n junction and the contact. This zero-dimensional quantum dot at the end of a one-dimensional semiconductor is the reduced dimensional analog of the two-dimensional inversion layer that forms at the boundary of a gated three-dimensional semiconductor.
81 citations