Switching Enhancement in Copper Oxide Thin-Film Transistors via Molybdenum Trioxide Buffering and Nitrogen Doping

There are three presentations of attention-deficit/hyperactivity disorder (ADHD): the predominantly inattention (ADHD-PI), predominantly hyperactive-impulsive (ADHD-HI), and combined (ADHD-C) presentations of ADHD. These may represent distinct childhood-onset neurobehavioral disorders with separate etiologies. ADHD diagnoses are behaviorally based, so investigations into potential etiologies should be founded on behavior. Animal models of ADHD demonstrate face, predictive, and construct validity when they accurately reproduce elements of the symptoms, etiology, biochemistry, and disorder treatment. Spontaneously hypertensive rats (SHR/NCrl) fulfill many validation criteria and compare well with clinical cases of ADHD-C. Compounding the difficulty of selecting an ideal model to study specific presentations of ADHD is a simple fact that our knowledge regarding ADHD neurobiology is insufficient. Accordingly, the current review has explored a potential animal model for a specific presentation, ADHD-PI, with acceptable face, predictive, and construct validity. The Thrsp gene could be a biomarker for ADHD-PI presentation, and THRSP OE mice could represent an animal model for studying this distinct ADHD presentation.

Thrsp Gene and the ADHD Predominantly Inattentive Presentation.

Alzheimer’s disease (AD) is the most common neurodegenerative disorder with the majority of patients classified as sporadic AD (sAD), in which etiopathogenesis remains unresolved. Though sAD is argued to be a polygenic disorder, apolipoprotein E (APOE) ε4, was found three decades ago to pose the strongest genetic risk for sAD. Currently, the only clinically approved disease-modifying drugs for AD are aducanumab (Aduhelm) and lecanemab (Leqembi). All other AD treatment options are purely symptomatic with modest benefits. Similarly, attention-deficit hyperactivity disorder (ADHD), is one of the most common neurodevelopmental mental disorders in children and adolescents, acknowledged to persist in adulthood in over 60% of the patients. Moreover, for ADHD whose etiopathogenesis is not completely understood, a large proportion of patients respond well to treatment (first-line psychostimulants, e.g., methylphenidate/MPH), however, no disease-modifying therapy exists. Interestingly, cognitive impairments, executive, and memory deficits seem to be common in ADHD, but also in early stages of mild cognitive impairment (MCI), and dementia, including sAD. Therefore, one of many hypotheses is that ADHD and sAD might have similar origins or that they intercalate with one another, as shown recently that ADHD may be considered a risk factor for sAD. Intriguingly, several overlaps have been shown between the two disorders, e.g., inflammatory activation, oxidative stress, glucose and insulin pathways, wingless-INT/mammalian target of rapamycin (Wnt/mTOR) signaling, and altered lipid metabolism. Indeed, Wnt/mTOR activities were found to be modified by MPH in several ADHD studies. Wnt/mTOR was also found to play a role in sAD and in animal models of the disorder. Moreover, MPH treatment in the MCI phase was shown to be successful for apathy including some improvement in cognition, according to a recent meta-analysis. In several AD animal models, ADHD-like behavioral phenotypes have been observed indicating a possible interconnection between ADHD and AD. In this concept paper, we will discuss the various evidence in human and animal models supporting the hypothesis in which ADHD might increase the risk for sAD, with common involvement of the Wnt/mTOR-pathway leading to lifespan alteration at the neuronal levels.

https://www.frontiersin.org/articles/10.3389/fnins.2023.1104985/pdf

From attention-deficit hyperactivity disorder to sporadic Alzheimer’s disease—Wnt/mTOR pathways hypothesis

Roll-to-roll gravure printed large-area flexible carbon nanotube synaptic photogating transistor arrays for image recognitions

Room temperature-grown highly oriented p-type nanocrystalline tellurium thin-films transistors for large-scale CMOS circuits

Abstract Children with attention-deficit/hyperactivity disorder (ADHD) often struggle with impaired executive function, temporal processing, and visuospatial memory, hallmarks of the predominantly inattentive presentation (ADHD-PI), subserved by the hippocampus. However, the specific genes/proteins involved and how they shape hippocampal structures to influence ADHD behavior remain poorly understood. As an exploratory tool, hippocampal dentate gyri tissues from thyroid hormone-responsive protein overexpressing (THRSP OE) mice with defining characteristics of ADHD-PI were utilized in proteomics. Integrated proteomics and network analysis revealed an altered protein network involved in Wnt signaling. Compared with THRSP knockout (KO) mice, THRSP OE mice showed impaired attention and memory, accompanied by dysregulated Wnt signaling affecting hippocampal dentate gyrus cell proliferation and expression of markers for neural stem cell (NSC) activity. Also, combined exposure to an enriched environment and treadmill exercise could improve behavioral deficits in THRSP OE mice and Wnt signaling and NSC activity. These findings show new markers specific to the ADHD-PI presentation, converging with the ancient and evolutionary Wnt signaling pathways crucial for cell fate determination, migration, polarity, and neural patterning during neurodevelopment. These findings from THRSP OE mice support the role of Wnt signaling in neurological disorders, particularly ADHD-PI presentation. 

/pdf/hippocampal-dentate-gyri-proteomics-reveals-wnt-signaling-2sutihp8.pdf

Hippocampal dentate gyri proteomics reveals Wnt signaling involvement in the behavioral impairment in the THRSP-overexpressing ADHD mouse model

Cuprous oxide (Cu2O) p-type thin-film transistors (TFTs) can be practically applied for complementary metal oxide semiconductor (CMOS) logic circuits, but the electrical performances are still insufficient due to high off-current and low field-effect mobility. Here, we have demonstrated Cu2O TFTs with improved field-effect mobility and low off-current through reduction of cupric oxide (CuO) impurities and dissociative Cu defects with the combination of deposition and annealing conditions. Copper oxide was deposited by radio frequency sputtering in mixed gases of argon and oxygen. After that, the deposited copper oxide was annealed at 800 °C in the tube furnace under a N2 atmosphere instead of a high vacuum condition. The fabricated Cu2O thin film had a high crystalline quality, the ratio of dissociative Cu defects decreased from 11.3 to 3.1%, and the electrical performances of the TFT including the fabricated Cu2O thin film exhibited the field-effect mobility of 1.11 ± 0.05 cm2/V·s, the on/off current ratio of 4.68 ± 0.8 × 104, and the subthreshold swing value of 3.91 ± 0.21 V dec–1. The fabricated Cu2O TFT showed a Vth shift of 3.31 V in the transfer curve under negative bias stress. Nitrogen plays a role in promoting Cu2O phase formation while it prevents CuO phase formation during the annealing process. In addition, oxygen added during sputtering increases the ratio of CuO in the copper oxide thin film and works effectively to reduce dissociative Cu defects in the annealing process. To determine the feasibility of the CMOS logic circuit, we also demonstrated the inverter with n-type indium–gallium–zinc oxide (IGZO) TFT and p-type Cu2O TFT, which showed a voltage gain of 14 at VDD = 20 V. 

Cu2O p-type Thin-Film Transistors with Enhanced Switching Characteristics for CMOS Logic Circuit by Controlling Deposition Condition and Annealing in the N2 Atmosphere

Li+ electrolyte-gated transistors (EGTs) have attracted significant attention as artificial synapses because of the fast response of Li+ ion, low operating voltage, and applicability to flexible electronics. Due to the inherent nature of Li+ ion, Li+ EGTs show, however, limitations, such as poor long-term synaptic plasticity and nonlinear/nonsymmetric conductance update, which hinder the practical applications of artificial synapses. Herein, Li+ EGTs integrated with poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ferroelectric polymer as a channel–electrolyte interlayer are presented. Owing to the polarized domains of PVDF-TrFE, the transport of Li+ ions at the channel–electrolyte interface is accelerated, and Li+ ions effectively penetrate the channel. Moreover, the self-diffusion of Li+ ions from the channel to the electrolyte is suppressed by the downward polarized domains. Li+ EGTs, therefore, successfully demonstrate synaptic characteristics, including excitatory postsynaptic current, short-/long-term synaptic plasticity, and paired-pulse facilitation. Also, conductance update in Li+ EGTs shows a dynamic range ( Gmax/ Gmin) of 92.42, high linearity, and distinct stability over 100 cycles. Based on their synaptic characteristics, inference simulations using a convolution neural network for the CIFAR-10 dataset imply that Li+ EGTs are suitable as artificial synapses with an inference accuracy of 89.13%. The new methodological approach addressing modulation of ion dynamics at the interface is introduced for developing practical synaptic devices.

Ferroelectrically modulated ion dynamics in Li+ electrolyte-gated transistors for neuromorphic computing

Synaptic devices that mimic biological neurons have attracted much attention for brain-inspired neuromorphic computing. Especially, synaptic thin-film transistors (TFTs) have emerged with simultaneous signal processing and information storage advantages. However, the analysis of excitatory postsynaptic current (EPSC) relies on an empirical model such as a serial RC circuit, which limits a systematic and in-depth study of synaptic devices in terms of material and electrical properties. Herein, the single-pulse-driven synaptic EPSC (SPSE) model, including capacitive effect and information of the synaptic window, is analytically proposed. The SPSE model can simulate EPSC of synaptic devices at given TFT-operating conditions. EPSC with the SPSE model can be characterized with quantified parameters for the capacitive effects and the synaptic windows, which also depend on the electrical condition applied to TFTs. Various kinds of synaptic-TFTs with different gate insulators (e.g., SiO2 and ion-gel) are used to confirm the performance of the SPSE model. For example, the SPSE model can capture the long-term robustness of ion-gel-based TFTs with specific quantified parameters. In addition, the SPSE model enables the estimation of energy consumption, which can potentially be leveraged to compare the energy cost of EPSC fairly. The SPSE model can provide a guideline to understand the physical properties of synaptic TFTs.

Jiyeon Kim

Papers

Hippocampal dentate gyri proteomics reveals Wnt signaling involvement in the behavioral impairment in the THRSP-overexpressing ADHD mouse model

Cu2O p-type Thin-Film Transistors with Enhanced Switching Characteristics for CMOS Logic Circuit by Controlling Deposition Condition and Annealing in the N2 Atmosphere

Ferroelectrically modulated ion dynamics in Li+ electrolyte-gated transistors for neuromorphic computing

Excitatory postsynaptic current model for synaptic thin-film transistors