J
Jody Fronheiser
Researcher at General Electric
Publications - 45
Citations - 1762
Jody Fronheiser is an academic researcher from General Electric. The author has contributed to research in topics: Avalanche photodiode & Single-photon avalanche diode. The author has an hindex of 11, co-authored 45 publications receiving 1709 citations.
Papers
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Journal ArticleDOI
Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates
TL;DR: In this article, the effect of using different orientations of 4H-SiC substrates on the performance of MOSFETs has been evaluated, with three sets of samples with (0001, (000-1) and (11-20) oriented SiC substrate.
Journal ArticleDOI
Solar-Blind 4H-SiC Avalanche Photodiodes
TL;DR: In this paper, solar-blind UV 4H-SiC avalanche photodetectors with both PIN and separate absorption and multiplication (SAM) structures were investigated, and a thin film optical filter on top of the devices was used to provide a high photon rejection ratio.
Patent
Dimension profiling of SiC devices
TL;DR: In this paper, a method for dimension profiling of a semiconductor device is presented, which involves incorporating a feature comprising a detectable element into the device, and thereafter detecting the detectable element to determine a dimension of the feature.
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Conformal dielectric films on silicon nanowire arrays by plasma enhanced chemical vapor deposition
TL;DR: In this paper, the authors describe the coating of silicon nanowire arrays with thin dielectric layers using PECVD, and assess the impact of deposition pressure, temperature, and array density on the silicon oxide coating thickness uniformity.
Journal ArticleDOI
Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface
TL;DR: In this paper, the role of nitrogen in simultaneously increasing the inversion channel mobility and reducing the threshold voltage of SiC MOSFETs was explained and the trade-off between threshold voltage and channel mobility can be correlated to the extent of nitridation.