We review work on In2O3:Sn films prepared by reactive e‐beam evaporation of In2O3 with up to 9 mol % SnO2 onto heated glass. These films have excellent spectrally selective properties when the deposition rate is ∼0.2 nm/s, the substrate temperature is ≳150 °C, and the oxygen pressure is ∼5×10−4 Torr. Optimized coatings have crystallite dimensions ≳50 nm and a C‐type rare‐earth oxide structure. We cover electromagnetic properties as recorded by spectrophotometry in the 0.2–50‐μm range, by X‐band microwave reflectance, and by dc electrical measurements. Hall‐effect data are included. An increase of the Sn content is shown to have several important effects: the semiconductor band gap is shifted towards the ultraviolet, the luminous transmittance remains high, the infrared reflectance increases to a high value beyond a certain wavelength which shifts towards the visible, phonon‐induced infrared absorption bands vanish, the microwave reflectance goes up, and the dc resisitivity drops to ∼2×10−4 Ω cm. The corre...

Evaporated Sn‐doped In2O3 films: Basic optical properties and applications to energy‐efficient windows

Magnetron sputtering: a review of recent developments and applications

1. Introduction and overview 2. Film stress and substrate curvature 3. Stress in anisotropic and patterned films 4. Delamination and fracture 5. Film buckling, bulging and peeling 6. Dislocation formation in epitaxial systems 7. Dislocation interactions and strain relaxation 8. Equilibrium and stability of surfaces 9. The role of stress in mass transport.

Thin Film Materials: Stress, Defect Formation and Surface Evolution

Atomic-scale control and manipulation of the microstructure of polycrystalline thin films during kinetically limited low-temperature deposition, crucial for a broad range of industrial applications, has been a leading goal of materials science during the past decades. Here, we review the present understanding of film growth processes—nucleation, coalescence, competitive grain growth, and recrystallization—and their role in microstructural evolution as a function of deposition variables including temperature, the presence of reactive species, and the use of low-energy ion irradiation during growth.

Microstructural evolution during film growth

Transparent conductors as solar energy materials: A panoramic review

Two cylindrically symmetric and complementary sputtering geometries, the post and hollow cathodes, were used to deposit thick (∼25-μ) coatings of various metals (Mo, Cr, Ti, Fe, Cu, and Al-alloy) onto glass and metallic substrates at deposition rates of 1000–2000 A/min under various conditions of substrate temperature, argon pressure, and plasma bombardment. Coating surface topographies and fracture cross sections were examined by scanning electron microscopy. Polished cross sections were examined metallographically. Crystallographic orientations were determined by x-ray diffraction. Microstructures were generally consistent with the three-zone model proposed by Movchan and Demchishin [Fiz. Metal. Metalloved. 28, 653 (1969)]. Three differences were noted: (1) at low argon pressures a broad zone 1–zone 2 transition zone consisting of densely packed fibrous grains was identified; (2) zone 2 columnar grains tended to be faceted at elevated temperatures, although facets were often replaced by smooth flat surf...

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Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings

Microstructure is a critical consideration when polycrystalline or amorphous thin films are used for applications such as microcircuit metallization layers and diffusion barriers. The trend in device fabrication toward lower processing temperatures means that such coatings must often be deposited at substrate temperatures T that are low relative to the coating material melting point Tm. The structure of vapor deposited coatings grown under these conditions consists typically of a columnar growth structure, defined by voided open boundaries, which is superimposed on a microstructure which may be polycrystalline (defined by metallurgical grain boundaries) or amorphous. The voided growth structure is clearly undesirable for most applications. Its occurrence is a fundamental consequence of atomic shadowing acting in concert with the low adatom mobilities that characterize low T/Tm deposition, and its formation can be enhanced by the surface irregularities which are common to microcircuit fabrication. This pap...

The microstructure of sputter-deposited coatings

Stress-related effects in thin films

Thick [1–10 mil (25.4–254.0 μm)] OFHC copper coatings were deposited on copper, tantalum, and stainless‐steel substrates maintained at temperatures (T) in the 50 °–950 °C range, at rates of from 200 to 18 000 A/min, using primarily hollow and also post‐type cathode sputtering apparatuses at argon pressures of 1 and 30 mTorr. Coating structures were examined by preparing metallographic cross sections. Surface topographies and fracture cross sections were examined by scanning electron microscopy. Crystallographic orientations were determined by x‐ray diffraction. No significant deposition rate influence was found on the low‐temperature structure zones reported previously [J. A. Thornton, J. Vac. Sci. Technol. 11, 666 (1974)] or on the columnar nature of coatings formed at elevated T. Truly equiaxed grain structures were generally not observed with hollow cathodes. Annealing twins were found within the grains for T≳350 °C. Evidence of extensive recrystallization and grain growth was seen for T∠900 °C. Coatin...

Influence of substrate temperature and deposition rate on structure of thick sputtered Cu coatings

Magnetron sputtering sources can be defined as diode devices in which magnetic fields are used in concert with the cathode surface to form electron traps which are so configured that the E×B electron‐drift currents close on themselves. Coaxial cylindrical magnetron sputtering sources in which post or hollow cathodes are operated in axial magnetic fields have been reported for a number of years. However, their performance is limited by end losses. A remarkable performance is achieved when the end losses are eliminated by proper shaping of the magnetic field or by using suitably placed electron‐reflecting surfaces. High currents and sputtering rates can be obtained, nearly independent of voltage, even at low pressures. This characterizes what has been defined as the magnetron mode of operation. This paper reviews the basic principles that underly the operation of dc sputtering sources in the magnetron mode with particular emphasis on cylindrical magnetrons. The important attributes of these devices as sputt...

John A. Thornton

Papers

Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings

The microstructure of sputter-deposited coatings

Stress-related effects in thin films

Influence of substrate temperature and deposition rate on structure of thick sputtered Cu coatings

Magnetron sputtering: basic physics and application to cylindrical magnetrons