The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

Black phosphorus field-effect transistors

We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31–0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/V·s, and an...

/pdf/phosphorene-an-unexplored-2d-semiconductor-with-a-high-hole-pehm34p0g2.pdf

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

Preceding the current interest in layered materials for electronic applications, research in the 1960's found that black phosphorus combines high carrier mobility with a fundamental band gap. We introduce its counterpart, dubbed few-layer phosphorene, as a new 2D p-type material. Same as graphene and MoS2, phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct and appreciable band-gap that depends on the number of layers. Our transport studies indicate a carrier mobility that reflects its structural anisotropy and is superior to MoS2. At room temperature, our phosphorene field-effect transistors with 1.0 um channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/Vs, and an on/off ratio up to 1E4. We demonstrate the possibility of phosphorene integration by constructing the first 2D CMOS inverter of phosphorene PMOS and MoS2 NMOS transistors.

Phosphorene: A New 2D Material with High Carrier Mobility

The applications of graphene and transition metal dichalcogenides in electronics are limited by their zero-bandgap and low mobility, respectively. Here, the authors demonstrate the potential of an emerging layered material—black phosphorous—for thin film electronics and infrared optoelectronics.

/pdf/rediscovering-black-phosphorus-as-an-anisotropic-layered-40dpp6m2eu.pdf

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

Samples of graphite have been recovered after exposure to explosive shocks of 300,000-atm estimated intensity X-ray and electron-diffraction examinations prove the existence of diamond in this material The mechanism proposed for the formation of diamond under these conditions is simple compression in the c-axis direction of the rhombohedral form of graphite

http://science.sciencemag.org/content/sci/133/3467/1821.full.pdf

Formation of Diamond by Explosive Shock

Studies of germanium and silicon by x-ray diffraction reveal that their crystal structure changes at high pressures from the semiconducting diamond-type structure to the metallic white tin structure, in analogy to the known "gray" to "white" transition in tin itself.

http://science.sciencemag.org/content/sci/139/3556/762.full.pdf

Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium

At high pressures, as determined by x-ray analysis, titanium and zirconium metal have a distorted, body-centered-cubic structure. This phase persists on pressure release. The normal hexagonal close-packed structures are recovered when the metals are heated. An electronic shift must occur in the transition. Hafnium metal showed no such transition.

https://science.sciencemag.org/content/sci/140/3562/72.full.pdf

Crystal Structures of Titanium, Zirconium, and Hafnium at High Pressures

Black phosphorus undergoes two reversible structural transitions at high pressures. The first is to a structure of the type arsenic A7. This structure is transformed to a simple cubic structure at higher pressures. The reversibility between the A7 and simple cubic structures at 111 kilobars indicates that the transition obtainable at this pressure provides a good calibration point by which high-pressure x-ray data may be united with volumetric or resistance measurements, or both.

https://science.sciencemag.org/content/sci/139/3561/1291.full.pdf

Crystal Structures Adopted by Black Phosphorus at High Pressures

The Hugoniot of the rutile phase of titanium dioxide has been determined to 1.25 megabars, and data show the existence of a phase change at about 0.33 megabar. The volume decrease associated with this transformation appears to be quite large (approximately 21 percent). Rutile, when recovered from shockloading in excess of the transformation pressure, is found to be irreversibly transformed to the orthorhombic lead dioxide structure (a distortion of the fluorite structure) with parameters a, 4.529; b, 5.464; and c, 4.905 angstroms and a calculated density of 4.374 grams per cubic centimeter. The new phase reverts to rutile at temperatures above 450°C. It is suggested that the new phase may be another diagnostic indicator of meteorite impact on the earth9s surface.

John C. Jamieson

Papers

Formation of Diamond by Explosive Shock

Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium

Crystal Structures of Titanium, Zirconium, and Hafnium at High Pressures

Crystal Structures Adopted by Black Phosphorus at High Pressures

Shock-wave compression and x-ray studies of titanium dioxide.