An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

An expandable support device for tissue repair is disclosed. The device can be used to repair hard or soft tissue, such as bone or vertebral discs. A method of repairing tissue is also disclosed. The device and method can be used to treat compression fractures. The compression fractures can be in the spine. The device can be deployed by compressing the device longitudinally resulting in radial expansion.

Expandable support device and method of use

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.

System and apparatus for flowable deposition in semiconductor fabrication

A plasma reactor is provided for processing a workpiece such as a semiconductor wafer or a dielectric mask. The reactor chamber has a ceiling, a side wall and a workpiece support pedestal inside the chamber and facing the ceiling along an axis of symmetry and defining a chamber volume between the pedestal and the ceiling. An RF plasma source power applicator is provided at the ceiling. An in-situ electrode body inside the chamber lies divides the chamber into upper and lower chamber regions. The in-situ electrode comprises plural flow-through passages extending parallel to the axis and having different opening sizes, the passages being radially distributed by opening size in accordance with a desired radial distribution of gas flow resistance through the in-situ electrode body.

Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode

A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

Method and apparatus for controlling temperature of a substrate

A method for operating a plasma reactor having a secondary chamber that is a neutral species source for the main chamber. The method in one embodiment of the invention consists of determining the desired increase in a main chamber neutral particle density to be contributed by the secondary chamber for a given main chamber ion density range, and then to maintain the main chamber source power below a level beneath which the secondary chamber is capable of supplying the desired main chamber neutral density contribution.

A method of operating a dual chamber reactor with neutral density decoupled from ion density

A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

Method and apparatus for stable plasma processing

A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions The isolated processing regions have an upper end and a lower end The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device The output frequency of the plurality of power supplies are phase and/or frequency locked together Additionally, the chamber includes a plurality of gas distribution assemblies Each gas distribution assembly is disposed within each isolated processing region A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support

John Holland

Papers

Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode

Method and apparatus for controlling temperature of a substrate

A method of operating a dual chamber reactor with neutral density decoupled from ion density

Method and apparatus for stable plasma processing

Tandem etch chamber plasma processing system