V
Valentin N. Todorow
Researcher at Applied Materials
Publications - 66
Citations - 2759
Valentin N. Todorow is an academic researcher from Applied Materials. The author has contributed to research in topics: Inductively coupled plasma & Capacitively coupled plasma. The author has an hindex of 28, co-authored 66 publications receiving 2749 citations.
Papers
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Patent
Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
Alexander Paterson,John Holland,Theodoros Panagopoulos,Edward P. Hammond,Brian K. Hatcher,Valentin N. Todorow,Dan Katz +6 more
TL;DR: In this paper, a plasma reactor is provided for processing a workpiece such as a semiconductor wafer or a dielectric mask, with a ceiling, a side wall and a support pedestal inside the chamber and facing the ceiling along an axis of symmetry.
Patent
Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
Samer Banna,Valentin N. Todorow,Kenneth S. Collins,Andrew Nguyen,Martin Jeff Salinas,Zhigang Chen,Ankur Agarwal,Anniruddha Pal,Tse-Chiang Wang,Shahid Rauf +9 more
TL;DR: In this paper, a dual-mode inductively coupled plasma processing system is described, which includes a process chamber having a dielectric lid and a plasma source assembly disposed above the lid.
Patent
Inductively coupled plasma reactor having RF phase control and methods of use thereof
Samer Banna,Valentin N. Todorow +1 more
TL;DR: In this paper, an inductively coupled plasma (ICP) reactor has a substrate bias that is capable of controlling the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source), which provides a powerful knob for fine process tuning.
Patent
Method and apparatus for stable plasma processing
TL;DR: In this article, a method and apparatus for etching a substrate using a spatially modified plasma is provided. But this method requires the substrate to be placed upon a pedestal and a process gas is introduced into the process chamber and a plasma is formed from the process gas.
Patent
Cathode liner with wafer edge gas injection in a plasma reactor chamber
TL;DR: In this paper, a wafer support for use in a plasma reactor chamber is described, in which the wafer supports has a gas injector adjacent and surrounding the Wafer edge.