J
John L. Freeman
Researcher at Motorola
Publications - 13
Citations - 290
John L. Freeman is an academic researcher from Motorola. The author has contributed to research in topics: Layer (electronics) & Metallic bonding. The author has an hindex of 8, co-authored 13 publications receiving 290 citations. Previous affiliations of John L. Freeman include Freescale Semiconductor.
Papers
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Book
Handbook of multilevel metallization for integrated circuits : materials, technology, and applications
TL;DR: The Handbook of Multilevel Metallization for Integrated Circuits as discussed by the authors provides a thorough technical summary of each of the key areas that make up a multilevel metal system, including associated design, analysis, materials, and manufacturing topics.
Patent
Multiple step metallization process
TL;DR: In this article, the metal layer coverage is improved by utilizing a multiple-step metallization process, where a thick portion of a metal layer is deposited on a semiconductor wafer at a cold temperature and the remaining amount of metal is deposited in a second step as the temperature is ramped up to allow for reflow of the metal layers through grain growth, recrystallization and bulk diffusion.
Patent
Method for making a planar multi-layer metal bonding pad
TL;DR: In this article, a method for planarizing a multi-layer metal bonding pad is provided, in which a first dielectric layer (13) is provided with a multitude of vias (17) covering the first metal layer (14), thereby exposing portions of the first sheet through the vias.
Proceedings ArticleDOI
An advanced 0.4 mu m BiCMOS technology for high performance ASIC applications
J. Kirchgessner,J. Teplik,V. Ilderem,D. Morgan,R. Parmar,Syd R. Wilson,John L. Freeman,Clarence J. Tracy,S. Cosentino +8 more
TL;DR: In this article, an advanced BiCMOS technology has been developed for high performance ASIC (application-specific integrated circuit) applications, which consists of a core 33 V CMOS process featuring 04 mu m effective channel lengths into which a high-performance n-p-n device module has been integrated.
Patent
Residue-free plasma etch of high temperature AlCu
TL;DR: In this article, a residue-free plasma etch of high temperature aluminum copper metallization is provided by the use of a single plasma etcher, which is covered by a protective oxide layer.