Showing papers by "John L. Freeouf published in 1989"
Patent•
IBM1
TL;DR: A surface layer of arsenic is formed on a GaAs substrate by exposing the substrate to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm for a period of 10 to 30 minutes while the substrate is immersed in a 1 : 1 HCl : H2O solution as discussed by the authors.
Abstract: of EP0108910A monocrystalline compound semiconductor substrate (1) is passivated with a layer (3) of the most volatile element of the semiconductor compound to prevent the formation of oxides that would interfere with further processing. A surface layer of arsenic is formed on a GaAs substrate by exposing the substrate to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm for a period of 10 to 30 minutes while the substrate is immersed in a 1 : 1 HCl : H2O solution. The passivated substrate may be stored and handled in air. When desired, the As layer can be removed by low temperature baking, for example at 150 DEG to 300 DEG C.
3 citations