An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

An implantable endoluminal device which is fabricated from materials which present a blood or body fluid and tissue contact surface which has controlled heterogeneities in material constitution. An endoluminal stent which is made of a material having controlled heterogeneities in the stent material along the blood flow surface of the stent and the method of fabricating the stent using vacuum deposition methods.

Endoluminal device exhibiting improved endothelialization and method of manufacture thereof

A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al 2 O 3 and Y 2 O 3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.

Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film

A method and apparatus for monitoring or calibrating a gas flow rate through a mass flow controller, for example, in a semiconductor fabrication process. A reference mass flow controller is disposed in a vent bypass loop for receiving gas flow from one of a plurality of mass flow controllers associated with a like plurality of supply gases. One of the gas supply mass flow controllers is selected and commanded to a specific gas flow rate. The gas flow through the selected mass flow controller also passes through the reference mass flow controller as the gas flows to a vent. Comparing the gas supply mass flow controller commanded flow rate with the actual flow rate as determined by the reference mass flow controller provides monitoring and calibration of the gas supply mass flow controller.

Method of mass flow control flow verification and calibration

A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.

MODULATED DEPOSITION PROCESS FOR STRESS CONTROL IN THICK TiN FILMS

A system and method for eliminating interconnect extrusions in vias that are formed during ionized metal plasma processing. By eliminating interconnect extrusions in vias, reliability failures and yield loss are decreased. The extrusions of interconnect metallization occur while wafers are subject to elevated temperatures that cause the internal stresses in the interconnect metallization to transit from a substantially tensile mode to a substantially compressive mode. By controlling the interconnect temperature to be below the temperature at which the interconnect transits from a tensile to a compressive mode, interconnect extrusions in vias are eliminated. The interconnect temperature is controlled by using an actively cooled pedestal in combination with a low temperature IMP deposition process. In addition, the IMP processing time may also be decreased to limit heating of the interconnect.

Method and system for eliminating extrusions in semiconductor vias

Described herein are apparatuses, methods and systems to monitor the performance of one or more mass flow controllers that supply gases to deposition, etching, and other manufacturing processes. A bypass loop is provided in fluid connection from either the process line or the vent line. In the bypass loop is a flow detector, such as a digitized mass flow controller. The flow detector takes one or more measurements of flow of gas from a mass flow controller, and data from such one or more measurements is used to provide information about the accuracy and/or precision of the mass flow controller. Also disclosed are ways to correct for back pressure or back vacuum in the process line.

Bypass loop gas flow calibration

Improvements of the shielding of the reactor chamber in a radio frequency (RF) reactor are realized by providing dressed edges on the apertures found in the shield. These improvements to the reactor chamber lead to decreased defect density on processed wafers and eliminate the need for frequent cleaning of the reactor chamber.

Joseph William Buckfeller

Papers

Method of mass flow control flow verification and calibration

MODULATED DEPOSITION PROCESS FOR STRESS CONTROL IN THICK TiN FILMS

Method and system for eliminating extrusions in semiconductor vias

Bypass loop gas flow calibration

Plasma confinement shield