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József Gyulai

Researcher at Hungarian Academy of Sciences

Publications -  236
Citations -  4631

József Gyulai is an academic researcher from Hungarian Academy of Sciences. The author has contributed to research in topics: Silicon & Ion implantation. The author has an hindex of 29, co-authored 235 publications receiving 4569 citations. Previous affiliations of József Gyulai include Osaka University & University of Erlangen-Nuremberg.

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On the Characteristics of CMOS Transistors in Thick SOI Films

TL;DR: Silicon-on-insillator (SOI) films, 4 μn thick, prepared by zone melting recrystallizntion (ZMR) are used for preparation of CMOS transistors.
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Analysis of High Dose Implanted Silicon by High Depth Resolution Rbs and Spectroscopic Ellipsometry and TEM

TL;DR: In this paper, the effect of implanted impurities from the dominant disorder contribution to the measured optical properties of high-dose Al and Sb implanted silicon was investigated and a qualitative picture from the optical properties measured by ellipsometry was provided.
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Surface impurity loss during MeV 14N+ ion bombardment

TL;DR: In this paper, a systematic study was done on gold films in the thickness range of 0.5-3200 atom/nm 2 and showed that sputtering of cascades induced by energetic nitrogen ions is responsible for the phenomenon.
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Energy distribution of traps in GaP crystals

TL;DR: In this paper, currentvoltage characteristics in the direction of slightlyp-type GaP: Cu crystals were investigated and the interpretation of the characteristics was based on anAshley-Milnes type [4] two-carrier model extended for the case of trapping.