Journal•ISSN: 0272-9172

# MRS Proceedings

Cambridge University Press

About: MRS Proceedings is an academic journal. The journal publishes majorly in the area(s): Thin film & Silicon. It has an ISSN identifier of 0272-9172. Over the lifetime, 69009 publications have been published receiving 247316 citations.

##### Papers published on a yearly basis

##### Papers

More filters

••

TL;DR: In this article, a new class of heat transfer fluids is developed by suspending nanocrystalline particles in liquids such as water or oil, and the resulting nanofluids possess extremely high thermal conductivities compared to the liquids without dispersed nanoparticles.

Abstract: Low thermal conductivity is a primary limitation in the development of energy-efficient heat transfer fluids required in many industrial applications. To overcome this limitation, a new class of heat transfer fluids is being developed by suspending nanocrystalline particles in liquids such as water or oil. The resulting nanofluids possess extremely high thermal conductivities compared to the liquids without dispersed nanocrystalline particles. For example, 5 volume % of nanocrystalline copper oxide particles suspended in water results in an improvement in thermal conductivity of almost 60% compared to water without nanoparticles. Excellent suspension properties are also observed, with no significant settling of nanocrystalline oxide particles occurring in stationary fluids over time periods longer than several days. Direct evaporation of Cu nanoparticles into pump oil results in similar improvements in thermal conductivity compared to oxide-in-water systems, but importantly, requires far smaller concentrations of dispersed nanocrystalline powder.

968 citations

••

TL;DR: In this paper, numerical methods for time stepping the Cahn-Hilliard equation are given and discussed, and the methods are unconditionally gradient stable, and are uniquely solvable for all time steps.

Abstract: Numerical methods for time stepping the Cahn-Hilliard equation are given and discussed. The methods are unconditionally gradient stable, and are uniquely solvable for all time steps. The schemes require the solution of ill-conditioned linear equations, and numerical methods to accurately solve these equations are also discussed.

609 citations

••

TL;DR: In this paper, an interatomic potential is fit to the Ni3Al alloy system, which can treat diatomic Ni2, diatomic Al2, fcc Ni, Fcc Al, L12 Ni, and L12 Al on an equal footing.

Abstract: To obtain meaningful results from atomistic simulations of materials, the interatomic potentials must be capable of reproducing the thermodynamic properties of the system of interest. Pairwise potentials have known deficiencies that make them unsuitable for quantitative investigations of defective regions such as crack tips and free surfaces. Daw and Baskes [Phys. Rev. B 29, 6443 (1984)] have shown that including a local “volume” term for each atom gives the necessary many-body character without the severe computational dependence of explicit n-body potential terms. Using a similar approach, we have fit an interatomic potential to the Ni3Al alloy system. This potential can treat diatomic Ni2, diatomic Al2, fcc Ni, fcc Al and L12 Ni3Al on an equal footing. Details of the fitting procedure are presented, along with the calculation of some properties not included in the fit.

549 citations

••

TL;DR: Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si 1- x Ge x quantum-well structures.

Abstract: The Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.

522 citations

••

TL;DR: Dip coating is a simple old way of depositing onto a substrate, especially small slabs and cylinders, a uniform thin film of liquid for solidification into a coating.

Abstract: Dip coating is a simple old way of depositing onto a substrate, especially small slabs and cylinders, a uniform thin film of liquid for solidification into a coating. The basic flow is steady, and in it film thickness is set by the competition among viscous force, capillary (surface tension) force and gravity. Thickness and uniformity can be sensitive to flow conditions in the liquid bath and gas overhead. The faster the substrate is withdrawn, the thicker the film deposited. This can be countered by using volatile solutes and combining rapid enough drying with the basic liquid flow. Then the physics grows more complicated, theoretical prediction of process performance more difficult, and control of the process more demanding. Outside product RD actually it is often modified.

458 citations