Showing papers by "Jun Koyama published in 1999"

Semiconductor integrated system

Abstract: In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel TFTs.

Touch panel, display device equipped with touch panel, and electronic equipment equipped with display device

Abstract: PROBLEM TO BE SOLVED: To accurately detect an input position by a touch panel which uses an optical sensor with simple constitution having high mechanical strength. SOLUTION: Illumination lights emitted by lighting means 112 and 122 are made into lights having high directivity to the X-axial and Y-axial direction of prism lens sheets 111 and 121 and then made incident on flanks 101ya and 101xa of a light guide plate 101. The incident light while totally reflected in the light guide plate 101 travel to the opposite flanks 101yb and 101xb and are received by optical sensor arrays 110 and 120. When the top surface of the light guide plate 101 is touched by an input pen or finger tip, the lights are refracted or absorbed at the touch position, so the optical sensor arrays decrease in photodetection quantity. COPYRIGHT: (C)2000,JPO

Semiconductor display device and its driving circuit

Abstract: PROBLEM TO BE SOLVED: To obtain the semiconductor display device which has low power consumption and small electromagnetic noise and small necessary radiation. SOLUTION: In a peripheral driving circuit, the clock signal whose level is raised by a level shifter circuit is inputted to a shift register circuit. The timing signal from the shift register circuit is inputted to the level shifter circuit and its voltage is raised in two stages. Consequently, the power consumption of the driving circuit is reduced, electromagnetic noise is suppressed, and unnecessary radiation is made small.

Active matrix display having storage capacitor associated with each pixel transistor

Abstract: A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.

Information Processing Device

Abstract: There is provided an information processing apparatus which occupies a small space and which is capable of supplying image information having high definition and high resolution. An information processing apparatus of the invention employs a head mount display (HMD) utilizing compact flat panel displays as a display device for displaying information. The use of a head mount display as the display device of the information processing apparatus prevents any reduction in a work space. It also makes it possible to change the size of a virtual display screen freely. In addition, the information processing apparatus of the invention is capable of displaying a plurality of pieces of information on the virtual display screen at a time.

Information processing system

Abstract: In an information processing system provided with a camera and a microphone, for transmitting and receiving information of a user to and from another information processing system through a transmission lime, image data of the user obtained by a camera is stored in a memory in advance. When one user communicates another user, image data of the one user is obtained by the camera and is synthesized with the image data stored in the memory in advance by image-processing. The clothes, hair, background, make-up etc. of the one user are made different to reality and the image data are transmitted to the another user in the communication.

Method of manufacturing a semiconductor device having TFTs with uniform characteristics

Abstract: In a circuit including at least one thin film transistor formed on an insulating substrate, a region 105 to which metal elements that promote crystallinity are added is disposed apart from a semiconductor island region 101 that forms the thin film transistor by a distance y, has a width w, and extends longitudinally over an end portion of the semiconductor island region 101 by a distance x. Also, in a TFT manufactured in a region which is not interposed between the nickel added regions, another nickel added region is disposed (resultantly, which is interposed between two nickel added regions). Further, all the intervals between the respective nickel added regions are preferably identified with each other. Thus, a thin film transistor circuit being capable of a high speed operation (in general, some tens of Mhz and more) is formed. In particular, correcting the difference of crystal growths, using a crystalline silicon film added with nickel, TFTs with uniform characteristics can be provided. Also, a crystal growth distance of a region where is not interposed between the nickel added regions can be sufficient.

Manufacture of active matrix type display device

Abstract: PROBLEM TO BE SOLVED: To make it possible to suppress the variations in the threshold voltage of thin-film transistors(TFTs) to a lower level by setting the width of the irradiation of a laser beam wider than the spacings between source followers and at an integral number of times of the spacings between the source followers. SOLUTION: The source followers are parallel connected by two pieces each in parallel to the progression direction of the laser beam. When the spacings between the source followers is defined as (d) and the irradiation width of the laser beam as L=3d, the source followers within the regions shown by diagonal lines are eventually irradiated with the laser beam twice but the source followers within the drop-out regions are eventually irradiated with the laser beam just once. Then, two kinds of the source followers varying in the threshold voltage form each other are eventually formed alternately or at every plural pieces in the progressing direction of the laser beam. The length in the overlap portions of the irradiation region of the laser beam is set at an integral number of times of the width (d) of the source followers, by which the source followers varying in the irradiation quantity of the laser beam may be regularly arrayed and manufactured with respect to the moving direction of the laser beam.

Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same

Abstract: The present invention provides a thin film semiconductor transistor which includes a substrate having a dielectric surface and an active layer made from a semiconductor thin film with crystallinity equivalent to that of a mono-crystal. While manufacturing a transistor, a semiconductor thin film including multiple crystals that can be cylindrical crystals and/or hairy crystals which are substantially parallel to the substrate is formed on a substrate. The structure formed is thermo-oxidized in halogen-contained environment to remove metal element in the film. Thus a single area is formed, wherein individual cylindrical or hairy crystal is in contact with any adjacent crystal, and it can be considered as a substantially single crystal area without any crystal granule boundary. Said area is suitable for forming the active layer of a transistor.