Showing papers by "Junji Komeno published in 1984"
TL;DR: In this article, a field effect transistor with a 2 μm Au gate was fabricated on a selectively doped InP/GaInAs heterostructure grown using chloride transport vapour-phase epitaxy.
Abstract: A field-effect transistor with a 2 μm Au gate was fabricated on a selectively doped InP/GaInAs heterostructure grown using chloride transport vapour-phase epitaxy. Complete pinch-off was observed, and transconductance of 90 and 160 mS/mm were measured at 295 and 77 K, respectively. From analysis of the drain I/V characteristic, two-dimensional electron gas at the interface was revealed to be the dominant factor for the channel current. This is the first report of a successful preparation of an n+ InP/n- GaInAs heterostructure for the selectively doped field-effect transistor.
5 citations
TL;DR: In this article, the lasing characteristics of optically pumped In0.53Ga0.47As/InP MQW structures grown by chloride vapour-phase epitaxy were investigated.
Abstract: The lasing characteristics of optically pumped In0.53Ga0.47As/InP MQW structures grown by chloride vapour-phase epitaxy were investigated. A detailed examination of the stimulated emission spectra shows that the MQW structures have good heterointerface properties.
3 citations
TL;DR: In this article, the first successful growth of InGaAsP quaternary alloy by chloride vapor phase epitaxy was reported, which used PCl3 and AsCl3 as sources of group V elements and In and Ga as metal sources.
Abstract: We report on the first successful growth of InGaAsP quaternary alloy by chloride vapor phase epitaxy, which uses PCl3 and AsCl3 as sources of group V elements and In and Ga as metal sources. We found that the controllability and reproducibility of the alloy composition are excellent. InGaAsP quaternary alloy with an energy gap corresponding to the light energy of 1.3 µm has been grown with lattice mismatch lower than 2×10-4.
3 citations
2 citations
1 citations
TL;DR: In this paper, the temperature dependence of the threshold excitation power of photopumped In0.53Ga0.47As/Inp quantum-well structures was investigated.
Abstract: We report the temperature dependence of the threshold excitation power of photopumped In0.53Ga0.47As/Inp quantum-well structures. We have observed that the quantum-well active layer results in an increase of the characteristic temperature T0.
1 citations
Patent•
22 Dec 1984
TL;DR: In this paper, the authors proposed to obtain reduced dark currents with excellent reproducibility by forming a constitution in which a first InP layer, a GaInAs layer and a second InPlayer are formed onto an InP substrate and the lattice constant of the GaInA layer is made larger then that of the firstInP layer.
Abstract: PURPOSE: To obtain reduced dark currents with excellent reproducibility by forming constitution in which a first InP layer, a GaInAs layer and a second InP layer are formed onto an InP substrate and the lattice constant of the GaInAs layer is made larger then that of the first InP layer. CONSTITUTION: An N - type InP buffer layer 2 under the state in which it is aligned with an n + type InP substrate 1 is formed onto the substrate 1, a GaInAs optical absorption layer 3, the displacement (Δa/a) of alignment thereof with the InP buffer layer 2 extends over 0∼0.2% or less and thickness thereof approx imately 1∼2μm, onto the layer 2 and an n - type InP cap layer 4 onto the layer 3. A silicon nitride film 6 in approximately 0.18μm thickness is shaped to an obtained wafer. Zn is diffused through an opening for forming a light-receiving region while using the silicon nitride film 6 as a mask to shape the p + type light-receiving region 5. COPYRIGHT: (C)1986,JPO&Japio
1 citations