Showing papers by "Junji Komeno published in 1990"
TL;DR: An MOVPE technique capable of mass-producing selectively doped AlGaAs/GaAs heterostructure has been developed for HEMT LSI applications as discussed by the authors, which has a load capacity of twelve 3-inch wafers.
12 citations
TL;DR: In this paper, the large area metalorganic vapor phase epitaxy growth of AlGaAs/GaAs heterostructures for high-electron-mobility transistor LSI applications is reported.
Abstract: We report the large-area metalorganic vapor phase epitaxy growth of AlGaAs/GaAs heterostructures for high-electron-mobility-transistor LSI applications. We used a barrel reactor with a load capacity of twelve 3-inch wafers. Wafer rotation results in ultrauniform epitaxial layers. The variations in both layer thickness and the carrier concentration of a Si-doped AlGaAs layer are less than ±1% over an entire 3-inch wafer. Wafer-to-wafer variations among the twelve wafers are ±1.1% for layer thickness and ±1.8% for the carrier concentration. The particle density on an epitaxial layer is less than 10 cm-2.
7 citations
TL;DR: In this paper, the authors discussed the growth mechanisms of metalorganic vapor phase epitaxy using tBAs and proposed a model in which the reactant on the surface changes from As2H2 to As2 with increasing temperature.
Abstract: The EL2 concentration in GaAs grown by metalorganic vapor‐phase epitaxy (MOVPE) using tertiarybutylarsine (tBAs) was measured by deep‐level transient spectroscopy. EL2 concentration decreases monotonically with increasing growth temperature. Taking the origin of EL2 into consideration, we discuss the growth mechanisms of MOVPE using tBAs. The EL2 concentration is affected by the incorporation of excess As into the crystal, and, therefore, depends on the kind of reactant on the surface. We propose a model in which the reactant on the surface changes from As2H2 to As2 with increasing temperature. The temperature dependence of EL2 concentration is explained by our model where As2 dissociates into atomic As on the surface and As2H2 gives excess As in the crystal.
5 citations