This paper reviews the recent progress in MEMS for radio frequency (RF) applications from a device perspective. RF MEMS devices reviewed include switches and relays, tunable capacitors, integrated inductors, mechanical resonators and filters, and some representative microwave and millimetre-wave components. Important device parameters are highlighted, as they have significant contributions to the performance of the final products in which the devices are used. The challenges and statuses of these RF MEMS devices are outlined and discussed. The intent of this topical review is to provide perspective to newcomers in the field, and empower potential end-users with an overall device picture, current status, and a vision of their ultimate performance capabilities.

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RF MEMS from a device perspective

Preface. Microelectromechanical Systems (MEMS) and Radio Frequency MEMS. MEMS Materials and Fabrication Techniques. RF MEMS Switches and Micro Relays. MEMS Inductors and Capacitors. Micromachined RF Filters. Micromachined Phase Shifters. Micromachined Transmission Lines and Components. Micromachined Antennae. Integration and Packaging for RF MEMS Devices. Index.

RF MEMS and their applications

An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

Switch Circuit and Method of Switching Radio Frequency Signals

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.

Integrated RF front end with stacked transistor switch

A novel RF switch IC using GaAs MESFET's has been developed for digital communication systems. The new IC is composed of a three-stage SPST switch and a thin film termination resistor, which realizes a high isolation and a low return loss. In addition, a high power handling capability and a low insertion loss are simultaneously realized with two kinds of pinch-off voltages using the orientation effect of GaAs MESFET's. According to these technologies, the excellent performance is achieved as follows: the isolation of 60 dB, the return loss of 20 dB, the 1 dB power compression of 27 dBm and the insertion loss of 1.6 dB at a frequency of 1.9 GHz with control voltages of 0/-5 V. The new switch IC contributes to a variety of communication system using high-quality digital modulation. >

K. Fujimoro

Papers

High isolation and low insertion loss switch IC using GaAs MESFET's