K. S. Yadav

TL;DR: The design parameters of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication systems are analyzed and it is observed that the CSDG MOSfET stores more energy (1.4 times) as compared to the CSSG M OSFET, which has more stored energy.

TL;DR: A double-Gate MOSFET is designed and compared its performance parameters with the single-gate MOSfET as RF CMOS switch, particularly the double-pole four-throw (DP4T) switch, for the wireless telecommunication systems.

TL;DR: In this paper, a 45-nm RF CMOS switch design with the double-pole four-throw circuit by using independently controlled double-gate MOSFET was analyzed and the potential advantages in terms of drain current, threshold voltage, attenuation with ON resistance, flat-band capacitances, charge density and power dissipation of the proposed switch were demonstrated.

TL;DR: In this paper, the drain current model and subthreshold model of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs were explored for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum.

TL;DR: To find good result, vary the voltage with smaller increments and perform the measurements by vary the applying voltage from +7V to -7V and then back to + 7V again and then save this result in a Data sheet with respect to temperature, volage and frequency using this program.