Kartik Ramaswamy

TL;DR: In this paper, a method of processing a thin-film structure on a semiconductor substrate using an optically writable mask is proposed, where the substrate is placed in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by introducing a carboncontaining process gas into the chamber, and generating a reentrant toroidal RF plasma current in a path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of

TL;DR: In this paper, a plasma immersion ion implantation reactor for implanting a species into a wafer includes an enclosure which has a side wall and a ceiling defining a chamber, and a workpiece support pedestal within the chamber for supporting a work piece having a surface layer into which the species are to be ion implanted.

TL;DR: In this article, a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layer is described.

TL;DR: In this article, a method and apparatus for removing excess dopant from a doped substrate is provided, where a reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopants adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds.

TL;DR: In this paper, a matching network coupled to the RF power supply that shares a common sensor for reading reflected RF power reflected back to the power supply and a common controller for tuning each of the RF Power supply and the matching network is described.