Kenneth S. Collins

TL;DR: In this paper, a single wafer, semiconductor processing reactor is described, which is capable of thermal CVD, plasmaenhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.

TL;DR: In this paper, a two-step continuous etch sequence is used in which the first step uses relatively high pressure, close electrode spacing and fluorocarbon gas chemistry for etching the electodes locally and the second step uses a relatively lower pressure, farther electrode spacing, and fluorinated gas chemistry to etch throughout the chamber and exhaust system.

TL;DR: In this paper, a high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD and plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.

TL;DR: In this article, a high pressure, high throughput, single wafer, semiconductor processing reactor is described which is capable of thermal CVD, plasma-enhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.

TL;DR: In this paper, a method of processing a thin-film structure on a semiconductor substrate using an optically writable mask is proposed, where the substrate is placed in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by introducing a carboncontaining process gas into the chamber, and generating a reentrant toroidal RF plasma current in a path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of