A wiring board includes a pad exposed from an opening portion of an outermost insulating layer. The pad includes: a first metal layer a surface of which is exposed from the wiring board; a second metal layer provided on the first metal layer and formed of a material effective in preventing a metal contained in a via inside the board from diffusing into the first metal layer; and a third metal layer provided between the second metal layer and the via, and formed of a material harder to be oxidized than that of the second metal layer. The thickness of the third metal layer is relatively thick, and is preferably selected to be three times or greater than a thickness of the second metal layer. A side surface of the third metal layer and a surface of the third metal layer to which the via is to be connected are roughed.

Wiring board and method of manufacturing the same

A substrate for a semiconductor device and a manufacturing thereof, and a semiconductor device using the same and a manufacturing method thereof are disclosed. For example, in the substrate according to the present invention, a core is eliminated, so that the substrate has a very thin thickness, as well, the length of electrically conductive patterns becomes shorter, whereby the electrical efficiency thereof is improved. Moreover, since a carrier having a stiffness of a predetermined strength is bonded on the substrate, it can prevent a warpage phenomenon during the manufacturing process of the semiconductor device. Furthermore, the carrier is removed from the substrate, whereby a solder ball fusing process or an electrical connecting process of the semiconductor die can be easily performed.

Substrate for semiconductor device and manufacturing method thereof

A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.

Wafer level package and fabrication method

A method and structure provides a Direct Write Wafer Level Chip Scale Package (DWWLCSP) that utilizes permanent layers/coatings and direct write techniques to pattern these layers/coatings, thereby avoiding the use of photoimagable materials and photo-etching processes.

Direct-write wafer level chip scale package

A method of forming an embedded electronic component package includes coupling a substrate to a first dielectric layer, strip, or panel, and forming first electrically conductive vias and traces in the first dielectric layer. A cavity is then formed in the first dielectric layer and an electronic component is attached in the cavity. A second dielectric layer, strip, or panel, is then applied to the first dielectric layer, thereby encasing the electronic component in dielectric. Second via apertures are then formed through the second dielectric layer to expose selected electronic component bond pads and/or selected first electrically conductive vias and traces. The second via apertures are then filled with an electrically conductive material to form second electrically conductive vias electrically coupled to selected bond pads and selected first electrically conductive vias and traces.

Embedded electronic component package fabrication method

A pad structure (40) of a wiring board being provided on a conductive pattern of the board and having a solder bump (20) mounted thereon, which is composed of a multi-plated layer comprising a metal layer (10) being formed as a part of the conductive pattern and constituting the main body of the bump, a phosphorus-containing nickel layer (12) being formed by electroless nickel plating and directly contacting with said metal layer, a copper layer (14) being formed on said nickel layer by electroless copper plating and having a thickness less than that of the nickel layer and a noble metal layer (16) being formed on said copper layer by electroless plating of the noble metal. The above pad structure of a wiring board allows, in a pad having a phosphorus-containing nickel layer, the improvement of the tensile strength of a solder member mounted thereon, such as a solder ball, or an external member soldered.

Kazuhiko Ooi

Papers

Pad structure of wiring board and wiring board