An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Disclosed are a liquid crystal display device which reduces the number of masks and improves an aperture ratio, and a method for fabricating the same. The liquid crystal display device includes gate and data lines perpendicularly intersecting on a substrate having pixel and pad parts; a thin film transistor on the substrate at the intersection of the gate and data lines; a pixel electrode on the substrate at the pixel part and connected directly to a drain electrode of the thin film transistor; an insulating film on the overall surface of the substrate including the pixel electrode and the thin film transistor; an organic film on the insulating film over the thin film transistor and the data line; and a common electrode of slit shapes overlapping the pixel electrode such that the insulating film is interposed between the common electrode and the pixel electrode.

Liquid crystal display device and method for fabricating the same

The basic physics underlying the operation and key performance issues of amorphous-silicon thin-film transistors (TFTs) are discussed. The static transistor characteristics are determined by the localized electronic states that occur in the bandgap of the amorphous silicon. The deep states, mostly consisting of Si dangling bonds, determine the threshold voltage, and the conduction band-tail states determine the field-effect mobility. The finite capture and emission times of the deep localized states lead to a dynamic transistor characteristic that can be described by a time-dependent threshold voltage. The transistors also show longer time threshold voltage shifts due to two other distinct mechanisms: charge trapping in the silicon nitride gate insulator and metastable dangling bond state creation in the amorphous silicon. These two mechanisms show characteristically different bias, temperature, and time dependencies of the threshold voltage shift. Illumination of a TFT causes the generation of electron-hole pairs in the space-charge region leading to a steady-state equal flux of electrons and holes and a reduction in the band-bending. In most applications, the photosensitivity should be minimized. The uniformity of large arrays of transistors for display applications is excellent, with variations in the threshold voltage of 0.5-1.0 V. >

The physics of amorphous-silicon thin-film transistors

Displays with touch sensing circuitry integrated into the display pixel stackup are provided. Circuit elements, such as touch signal lines, such as drive lines and sense lines, grounding regions, in the display pixel stackups can be grouped together to form touch sensing circuitry that senses a touch on or near the display. An integrated touch screen can include multi-function circuit elements that can operate as circuitry of the display system to generate an image on the display, and can also form part of a touch sensing system that senses one or more touches on or near the display. The multi-function circuit elements can be, for example, capacitors in display pixels that can be configured to operate as storage capacitors/electrodes, common electrodes, conductive wires/pathways, etc., of the display circuitry in the display system, and that may also be configured to operate as circuit elements of the touch sensing circuitry.

Integrated touch screen

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

In an active matrix-type display device where scan bus lines (Si) and data bus lines (Dj) are formed on different substrates, two kinds of scan bus lines (SPi, SNi) are provided. A first switching element (TFTNij) is connected between a reference voltage supply line (VR) and a display electrode (Eij), and is controlled by a first scan bus line (SNi), and a second switching element (TFTPij) is connected between the reference voltage supply bus line (VR) and the display electrode, and is controlled by a second scan bus line (SPi). The first switching element (TFTNij) is turned ON by a positive or negative potential at the first scan bus line.

High quality active matrix-type display device

A display device including a diffraction grating from which a diffracted light of the zeroth order and a diffracted light of the first order having different color light components emerge to establish color separation. An array of micro-lenses is arranged on a liquid crystal panel. The liquid crystal panel has a plurality of picture elements and each picture element includes a plurality of color display dots. The color display dots in each picture element are arranged in the vertical relationship and in the order of wavelength of the light. A green light component of diffracted light of the first order is made incident normal to the liquid crystal panel, and the diffracted light of the zeroth order passes through the liquid crystal panel at a greater angle relative to the normal to the liquid crystal panel.

Display device having diffraction grating

A thin-film EL display device incorporates a MOS active matrix Each of the MOS transistor arrays is additionally provided in parallel with a Zener diode for the purpose of protecting the device from a high voltage This Zener diode has a breakdown voltage characteristic corresponding to a difference between a luminous voltage and a non-luminous voltage of an EL display element and clamps the voltage across the MOS transistor, in the "OFF" state, to a voltage less than or equal to non-recoverable breakdown voltage

El display device

In a driving device of an active matrix type liquid crystal display unit including a liquid crystal display panel, a scan driver, and a data driver, a data voltage controlling apparatus is provided to achieve digital multiple gray-scale levels with little flickering. The data voltage controlling apparatus supplies the data driver with a combination of two different data voltages picked up from a plurality of digital data voltages previously set. The combination of two different data voltages are, for example, a combination of different waveforms, a combination of negative level and positive level, and a combination of two different voltages having at least a voltage difference. Further, a division of T-V characteristics and an exchange of data voltages are carried out to reduce the flickering.

Apparatus for controlling data voltage of liquid crystal display unit to achieve multiple gray-scale

An EL device having an electrode arrangement including first electrodes and at least one row of second electrodes intersecting the first electrodes and energized by a combination of the first and second electrodes. The second electrodes are divided into a plurality of sub-electrode portions. The electrode arrangement is such that the first electrodes each comprise a plurality of segments that are commonly-connected and intersect different sub-electrode portions. Another electrode arrangement is such that the first electrodes are arranged in a belt form and intersect different sub-electrodes portions in a meander manner. The EL device can be applied to an electrophotographic printing system as an optical system for forming a latent image. EL elements are repeatedly energized with the same data to give a sufficient intensity of light on a light sensitive medium, and deenergized for a time in which the intensity is decreased to a low level.

Kazuhiro Takahara

Papers

High quality active matrix-type display device

Display device having diffraction grating

El display device

Apparatus for controlling data voltage of liquid crystal display unit to achieve multiple gray-scale

Electro luminescence device and electrophotographic printing system using the same