Patent
El display device
Reads0
Chats0
TLDR
In this article, a thin-film EL display device incorporates a MOS active matrix and a Zener diode for the purpose of protecting the device from a high voltage, which has a breakdown voltage characteristic corresponding to a difference between a luminous voltage and a non-luminous voltage of an EL display element.Abstract:
A thin-film EL display device incorporates a MOS active matrix Each of the MOS transistor arrays is additionally provided in parallel with a Zener diode for the purpose of protecting the device from a high voltage This Zener diode has a breakdown voltage characteristic corresponding to a difference between a luminous voltage and a non-luminous voltage of an EL display element and clamps the voltage across the MOS transistor, in the "OFF" state, to a voltage less than or equal to non-recoverable breakdown voltageread more
Citations
More filters
Patent
Electro-optical device
TL;DR: In this article, an electro-optical device having a plurality of pixels, including a majority of EL elements, provides a gray-scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period, and a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one-frame period.
Patent
A method of fabricating a TFT-EL pixel
Biay Cheng c,Chin Wan Tan +1 more
TL;DR: In this paper, a method of making a 4-terminal active matrix electroluminescent device that utilizes an organic material as the electrolumeinescent medium is described.
Patent
Electro-optical device and method of driving the same
TL;DR: An active matrix display device for suppressing voltage variation ΔV due to off-operation of a gate pulse, including TFTs and picture-element electrodes, was proposed in this paper. But it was not shown in practice.
Patent
Electro-Optical Device and Electronic Device
TL;DR: In this article, a multi-gate structure was proposed to prevent hot carrier injection and reduce the OFF current value of the EL display, where the LDD region of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot-carrier injection and reduction of OFF current values.
Patent
Display device and driving method thereof
Bong-Hyun You,Min-Koo Han +1 more
TL;DR: In this article, a controller generates a touch sync signal for controlling timing of a touch sensing period and a display period in each of a plurality of frames in a touch display device.
References
More filters
Patent
Input transient protection for complementary insulated gate field effect transistor integrated circuit device
TL;DR: In this article, a diode having low breakdown is established by forming P+type regions or N+ type regions in electrical communication with the resistor so that the diode breakdown is effectively dominated by the impurity concentration characteristics of the P+ type or N + type regions.
Patent
Integrated power transistor with ballasting resistance and breakdown protection
TL;DR: An integrated power transistor has at least one emitter region, having a ballasting resistance to reduce the possibility of second breakdown as mentioned in this paper, and a voltage control diode, located between the collector terminal and the emitter terminal, to protect against high voltages caused by transient surges.
Patent
An insulated gate type field effect semiconductor device having a breakdown preventing element
TL;DR: In this paper, an MOS field effect transistor comprising an N-type semiconductor substrate having a P type diffused region formed therein which is more shallow than a P-type source and a P drain diffused regions, is connected to a gate electrode by a conductive means.
Patent
Gate controlled diode protection for drain of IGFET
Yasukazu Inoue,Masanori Kikuchi +1 more
TL;DR: An integrated circuit includes an insulated-gate field effect transistor and a protection device coupled to either the source or drain of the transistor as mentioned in this paper, and the protection device includes a gate-controlled diode having a breakdown voltage that is less than the breakdown voltage of the drain.