Structure and properties of TiN coatings

This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called 'war stories', to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. This title is fully revised and updated to include the latest developments in PVD process technology. It includes 'War stories' drawn from the author's extensive experience emphasize important points in development and manufacturing. Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing.

Handbook of physical vapor deposition (PVD) processing

http://ir.qibebt.ac.cn/bitstream/337004/1617/1/Nanostructured%20transition%20metal%20nitrides%20for%20energy%20storage%20and%20fuel%20cells.pdf

Nanostructured transition metal nitrides for energy storage and fuel cells

The preparation of thin films by physical vapour deposition methods

TiN coatings on steel

Applications of wear-resistant thick films formed by physical vapor deposition processes

Approaches to a dry process of hard Cr plating to overcome industrial pollution problems should be extensively investigated for many possible applications. Deposition by using a hollow‐cathode discharge (HCD) gun, however, is one of the potential solutions; HCD generates very high density plasma between the substrate and the evaporation source. The plasma also serves to produce compound chemical films when reactive gas is properly introduced during deposition. Ductile Cr films are obtained in a variety of substrate temperatures ranging from 20° to 670 °C and an applied negative voltage from 0 to −200 V to the substrate. Hardness, corrosion resistance, and surface roughness are closely related to the experimental parameters. Hard carbide and nitride are formed by introducing acetylene and nitrogen, respectively, to a partial pressure around 1×10−4 Torr (1.33×10−2 Pa) mixed in argon of 7.5×10−4 Torr (0.1 Pa); hollow‐cathode discharge with or without a negative bias voltage gives a sound film at a relatively low substrate temperature of 350 °C or higher. These films have high micro Vickers hardness between 1100 to 1800 and 1200 to 1600 for carbide and nitride, respectively. The carbide and the nitride films show reasonably good corrosion resistance and good adhesion to steel substrates.

Physical vapor deposition of thick Cr and its carbide and nitride films by hollow‐cathode discharge

Ag and Cr have been evaporated by a low−voltage, high−current electron beam from a HCD gun and deposited on a negatively biased substrate. The flux of Ag ions which strike the substrate was detected separately from Ag atoms, gas atoms, and ions of argon, as reported elsewhere. In the present study, calorimetric measurement of heat dissipated at the negatively biased receiving plane (substrate) shows that the major contribution to heat input comes from energetic neutrals rather than from metal ions; the contribution is, for example, 48% and 23%, respectively, of the total heat dissipated. The bias voltage, argon pressure, electron−beam voltage, beam current, and Ag deposition rate are −200 V, 0.75 mTorr, 45 V, 55 A, and 0.8 μ/min, respectively. Thick films of Cr deposited on steel sheets are evaluated as functions of substrate temperature and negative−bias voltage.

Thermal input to substrate during deposition by hollow-cathode discharge

High rate production of metal ions by using an optimum voltage, high current plasma electron beam with metal vapor evaporated from a molten pool is investigated. A focussed electron beam of several ten volts and upto 130 amps strikes an evaporation source at the glancing angle of 45°. Ag is evaporated at a high rate between 0.2 to 2 mTorr of argon and deposited on a substrate. The metal ion density on the substrate is observed separately from residual gas ions and secondary electron emissions from the substrate due to bombardment by photons, ions and metastables. The ratio of the number of the metal ions to the metal atoms, both are striking on the substrate, is measured as a function of the electron beam current, the argon pressure and the applied negative voltage to the substrate. Fraction of the metal ions in the metal species which strikes on the substrate varies from 22 to 40% depending on experimental parameters. Comparison of microscopic structures of the two Ag films deposited by using this plasma evaporation source and by a resistance heating source in a clean high vacuum respectively are presented as a function of substrate temperature during the deposition.

Production and Measurement of Dense Metal Ions for Physical Vapor Deposition by a Hollow Cathode Discharge

We achieved the manufacture of diffraction gratings with line edge roughness of less than 3% at 3σ/ave by utilizing a scanning overlapped phase interference lithography (SOPHIL) system. The SOPHIL method consists of two steps. As the first step, a spot fringe pattern generated by two-beam interference is scanned direction along the grid on the wafer. As the second step, the spot is moved just the integer multiple length of its fringe period, then the spot is exposed again over the 1st fringe. In addition, a 2D-EPE waveguide combiner was fabricated using SOPHIL system. Measured MTF was 0.5 at 0.6 cycles/ milliradian. 

Kazuyuki Tsuruoka

Papers

Applications of wear-resistant thick films formed by physical vapor deposition processes

Physical vapor deposition of thick Cr and its carbide and nitride films by hollow‐cathode discharge

Thermal input to substrate during deposition by hollow-cathode discharge

Production and Measurement of Dense Metal Ions for Physical Vapor Deposition by a Hollow Cathode Discharge

High precision grating of waveguide combiner with scanning overlapped phase interference lithography