Keith G. Fife

TL;DR: In this article, a chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor is presented, where the region extends beneath and adjacent to a gate region.

TL;DR: In this article, a chemically-sensitive transistor device, such as an ISFET, is used to test the functionality of the transistor without exposing the device to liquids, and the parasitic capacitance of at least either the source or drain is exploited to bias the floating gate.

TL;DR: An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as the accumulated plurality of charges, the output signal representing the ion concentration as discussed by the authors.

TL;DR: In this article, a chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a dielectric material defines an opening extending to the upper surface of the floating gate, and a conductive sidewall spacer is on a sidewall of the opening.

TL;DR: In this paper, a chemical sensor including a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface is described, where a dielectric material defines a reaction region.