This study was conducted to investigate the effects of sublethal phosalone concentrations on the hematological, serum biochemical, and immunological responses of carp (Cyprinus carpio). The fish were semi-statically exposed to low (0.15 mg/L), medium (0.3 mg/L), and high (0.6 mg/L) phosalone concentrations for 14 days. Results showed that the hematological variables red blood cell count (RBC, ×106/mm3), white blood cell count (×103/mm3), hematocrit (Hct, %), hemoglobin (Hb) concentration (g/dL), corpuscular volume mean (MCV, μm3), corpuscular Hb mean (MCH, pg), and mean corpuscular Hb concentration (MCHC, %) were significantly affected by phosalone concentrations. In addition, white blood cell types (neutrophil, lymphocyte, and monocyte) were also affected. Furthermore, serum proteins, metabolites, lipids, enzymes, and electrolytes were significantly altered by different phosalone concentrations. Nitroblue tetrazolium (NBT), lysozyme, and myeloperoxidase activities significantly altered treatment with phosalone concentrations. As a result, phosalone resulted in significant physiological and behavioral changes in C. carpio. These changes may potentially impair C. carpio’s survival capability in natural habitats or aquaculture.

Hematological, serum biochemical, and immunological responses in common carp (Cyprinus carpio) exposed to phosalone

Etching control of benzocyclobutene in CF4 / O2 and SF6 / O2 plasmas with thick photoresist and titanium masks

Characterization of reactive ion etching of benzocyclobutente in SF6/O2 plasmas

Highly anisotropic features of benzocyclobutene, a promising low stress layer for microelectromechanical systems, were achieved by inductively coupled plasma (ICP) etching with fluorine/oxygen based chemistry. The effects of chamber pressure, platen power, ICP power, and SF6/O2 relative concentration were studied on etch rate, selectivity, and sidewall morphology. Highly anisotropic features were achieved with sidewall slopes ∼88° for almost all conditions. Grass-like residue, due to redeposition of etch material, was observed under certain conditions and is shown to be dependent on pressure, ICP power, and feature dimensions.

Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry

Etching of thick nonphotosensitive benzocyclobutene (BCB) was investigated using a high density SF6/O2 plasma with an inductively coupled plasma (ICP) etcher. The effects of SF6 concentration on etching characteristics, including etching rate, anisotropy, and residue, are fully discussed in this article. Moreover, experiments were designed and carried out to study the causes of BCB etching residue. A grasslike etching residue was observed for low SF6 concentration at the bottom of BCB patterns with a SiO2/SixN layer and the BCB patterns cured on a N2-purged hotplate, while residue-free etching is obtained for the BCB patterns cured in a N2-purged vacuum chamber. A high SF6 concentration and exclusion of O2 during hard curing are important to prevent the grasslike etching residue. A highly anisotropic and residue-free etching of thick (∼13 μm) BCB is achieved for BCB cured in a N2-purged vacuum chamber at 250 °C for 1 h and with a pure SF6 plasma under etching conditions of 700 W ICP power, 100 W reactive ...

Thick benzocyclobutene etching using high density SF6/O2 plasmas

The feasibility of controlling the sidewall angle of thick benzocyclobutene (BCB) etched in a CF4∕O2 plasma using thick photoresist as an etch mask has been investigated. Sidewall angle, BCB etch rate, and BCB to photoresist selectivity as functions of chamber pressure and CF4 to O2 ratios are reported. Through the use of postdeveloped reflown photoresist, an optimum sidewall angle of less than 60° was achieved at 33mT chamber pressure and a 19% CF4∕O2 ratio. The method presented here achieves deep, residue-free etching of thick BCB with a sidewall profile suitable for e-beam evaporated and lifted metal for use in vertical interconnects.

Kenneth Vaccaro

Papers

Sidewall profile control of thick benzocyclobutene reactively ion etched in CF4∕O2 plasmas