An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.

Top layers of metal for high performance IC's

The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.

Semiconductor Integrated Circuit Device

A process of forming an integrated circuit containing elongated contacts which connect to three active areas and/or MOS gates, and elongated contacts which connect to two active areas and/or MOS gates and directly connect to a first level interconnect, using a litho-freeze-litho-etch process for a contact etch mask. A process of forming an integrated circuit containing elongated contacts which connect to three active areas and/or MOS gates, and elongated contacts which connect to two active areas and/or MOS gates and directly connect to a first level interconnect, using a litho-freeze-litho-etch process for a first level interconnect trench etch mask. A process of forming the integrated circuit using a litho-freeze-litho-etch process for a contact etch mask and a litho-freeze-litho-etch process for a first level interconnect trench etch mask.

Elongated contacts using litho-freeze-litho-etch process

Provided are a semiconductor device comprising a semiconductor substrate, a first insulating film formed thereover, interconnects formed over the first insulating film and having copper as a main component, a second insulating film formed over the upper surface and side surfaces of each of the interconnects and over the first insulating film and having a function of suppressing or preventing copper diffusion, and a third insulating film formed over the second insulating film and having a dielectric constant lower than that of the second insulating film; and a method of manufacturing the semiconductor device This invention makes it possible to improve dielectric breakdown strength between copper interconnects and reduce capacitance between the copper interconnects

Semiconductor device and a method of manufacturing the same

A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

Kensuke Ishikawa

Papers

Semiconductor integrated circuit device and a method of manufacturing the same