https://tandfonline.com/doi/pdf/10.1080/14686996.2019.1599694

New development of atomic layer deposition: processes, methods and applications.

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in substantial preservation of a mask layer on the substrate. The protective coating may be deposited using particular reactants and/or reaction conditions that are unlikely to damage the mask layer. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition, a modified plasma assisted atomic layer deposition, or plasma assisted chemical vapor deposition.

Technique to deposit sidewall passivation for high aspect ratio cylinder etch

Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl 2 ). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

Oxide and metal removal

An improved exhaust system for a gas-phase reactor and a reactor and system including the exhaust system are disclosed. The exhaust system includes a channel fluidly coupled to an exhaust plenum. The improved exhaust system allows operation of a gas-phase reactor with desired flow characteristics while taking up relatively little space within a reaction chamber.

Gas-phase reactor and system having exhaust plenum and components thereof

Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

Systems and methods for improved semiconductor etching and component protection

Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

Atomic layer etching of tungsten for enhanced tungsten deposition fill

Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

PROBLEM TO BE SOLVED: To provide a method for charging the feature (work-structure) of a substrate completely with tungsten.SOLUTION: In a deposition-atomic layer etching (ALE) process for charging a feature with tungsten, to form a reaction layer, a feature is charged therein with tungsten by ALE cycle 520A and B and 505A and B containing modifying operations 515A and B, and removing actions 535A and B for removing or etching only that modified layer. By alternating and integrating pulses for surface modifications and pulses for removals at the etching time, tungsten is deposited in the features of a high aspect ratio. Incidentally, said tungsten may be replaced, as the case may be, by titanium, tantalum, nickel, cobalt or molybdenum.SELECTED DRAWING: Figure 5

Tungsten atomic layer etching for enhancement of tungsten deposition charging

SOLUTION: Methods are provided for integrating atomic layer etching and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etching and atomic layer deposition processes to protect feature degradation during etching, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.SELECTED DRAWING: Figure 1C

Keren Jacobs Kanarik

Papers

Atomic layer etching of tungsten for enhanced tungsten deposition fill

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

Tungsten atomic layer etching for enhancement of tungsten deposition charging

Integrating atomic scale ald (atomic layer deposition) process and ale (atomic layer etching) process