A user-configurable circuit architecture includes a two dimensional array of functional circuit modules disposed within a semiconductor substrate. A first interconnect layer disposed above and insulated from the semiconductor substrate contains a plurality of conductors and is used for internal connections within the functional circuit modules. A second interconnect layer disposed above and insulated from the first interconnect layer contains a plurality of segmented tracks of conductors running in a first direction and is used to interconnect functional circuit module inputs and outputs. A third interconnect layer disposed above and insulated from the second interconnect layer contains a plurality of segmented tracks of conductors running in a second direction, some of the segments of conductors forming intersections with ones of the segments of the conductors in the second interconnect layer, and is used to interconnect functional circuit module inputs and outputs to implement the desired applications. A plurality of user-configurable interconnect elements are placed directly between the second and third interconnect layers at the intersections of selected segments of the segmented conductors in the second and third interconnect layers. More user-configurable interconnect elements are located between adjacent segments of the segmented conductors in both the second and third interconnect layers. Pass transistors located in the semiconductor substrate in between the functional circuit modules are connected between adjacent segments in both the second and third interconnect layers and between selected intersecting segments in the second and third interconnect layers.

Programmable interconnect architecture

Antifuses and gate arrays with antifuses are disclosed that have high thermal stability, reduced size, reduced leakage current, reduced capacitance in the unprogrammed state, improved manufacturing yield, and more controllable electrical characteristics. Some antifuses include spacers in the antifuse via. In some antifuses, the programmable material is planar, and the top or the bottom electrode is formed in the antifuse via. In some gate arrays, the antifuses are formed above the dielectric separating two levels of routing channels rather than below that dielectric.

Programmable interconnect structures and programmable integrated circuits

An integrated circuit (IC) package substrate has a dielectric layer and a micro filled via formed substantially in the center of a hole in the dielectric layer. The IC package substrate has at least one chip bonding pad and one ball attach pad that are electrically coupled to each other by the micro filled via. The micro filled via is formed of a material called a "micro filled via material" that includes a binding material and optionally includes a number of particles (between 0%-90% by volume) dispersed in the binding material. The binding material can be any material, such as a polymer that is either conductive or nonconductive. The particles can be formed of any conductive material, such as a conductive polymer or a conductive metal (e.g. copper or gold). An electrical conductor can be originally formed simply by contact between conductive particles located adjacent to each other. In an optional step, the micro filled via is subjected to a programming current (in a step called "programming") to lower the resistance of an originally formed electrical conductor, or to originally form an electrical conductor by break down of a dielectric material. The IC package substrate can be formed in either a cavity up or a cavity down configuration.

Ball grid array structure and method for packaging an integrated circuit chip

A read-only memory is made electrically addressable over a passive conductor matrix, wherein the volume between intersection of two conductors (2; 4) in the matrix defines a memory cell (5). Data are stored as impedance values in the memory cells. The memory cells (5) comprise either an isolating material (6) which provides high impedance or one or more inorganic or organic semiconductors (9), preferably with an anisotropic conducting property. The semiconductor material (9) forms a diode junction at the interface to a metallic conductor (2; 4) in the matrix. By suitable arrangement of respectively the isolating material (6) and semiconductor material (9) in the memory cells these may be given a determined impedance value which may be read electrically and corresponds to logical values in a binary or multi-valued code. One or more read-only memories (ROM) may be provided on a semiconductor substrate (1) which also comprises driver and control circuits (13), to accomplish a read-only memory device. The device may be realized either planar or also volumetrically by stacking several read-only memories (ROM) in horizontal layers (15) and connecting them with the substrate (1) via addressing buses.

A read-only memory and read-only memory devices

A user-programmable interconnect architecture, which may be used for logic arrays for digital and analog system design, is disclosed. In one embodiment, a plurality of logic cells or modules in a matrix are connected by vertical and horizontal wiring channels. The wiring channels may in turn be programmed by the user to interconnect the various logic cells to implement the required logic function. The wiring channels comprise wiring segments connected by normally open programmable elements situated at the intersection of any two segments to be connected.

Reconfigurable programmable interconnect architecture

In fabricating a PROM cell, an electrical isolation mechanism (44 and 32) is formed in a semiconductive body to separate islands of an upper zone (36) of first type conductivity (N) in the body. A semiconductor is introduced into one of the islands to produce a region (48) of opposite type conductivity (P) that forms a PN junction with adjacent semiconductive material of the island. Ions are implanted to convert a surface layer (60) of the region into a highly resistive amorphous form which is irreversibly switchable to a low resistance state. A path of first type conductivity extending from the PN junction through another of the islands to its upper surface is created in the body to complete the basic cell.

Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation

A programmable read only memory structure is formed in oxide isolated regions of a crystalline semiconductor body. The memory elements in an isolated region include a semiconductive junction diode formed by implanting or diffusing a first surface region of opposite conductivity type in the body of first conducitivity type. The programmable element of the diode array comprises a second region formed as a surface layer in the first surface region. The second region is formed by implanting ions of sufficient energy and density to convert the surface layer of the first region from crystalline to amorphous form. The amorphous layer is an antifuse and is electrically and irreversibly switchable from high resistance state to low resistance state.

Kevin Gene-Wah Jew

Papers

Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation

Programmable read-only memory structure and method of fabricating such structure