Aspects of the subject disclosure may include, for example, receiving, by a feed point of a dielectric antenna, electromagnetic waves from a dielectric core coupled to the feed point without an electrical return path, where at least a portion of the dielectric antenna comprises a conductive surface, directing, by the feed point, the electromagnetic waves to a proximal portion of the dielectric antenna, and radiating, via an aperture of the dielectric antenna, a wireless signal responsive to the electromagnetic waves being received at the aperture. Other embodiments are disclosed.

Method and apparatus for coupling an antenna to a device

A distributed antenna and backhaul system provide network connectivity for a small cell deployment. Rather than building new structures, and installing additional fiber and cable, embodiments described herein disclose using high-bandwidth, millimeter-wave communications and existing power line infrastructure. Above ground backhaul connections via power lines and line-of-sight millimeter-wave band signals as well as underground backhaul connections via buried electrical conduits can provide connectivity to the distributed base stations. An overhead millimeter-wave system can also be used to provide backhaul connectivity. Modules can be placed onto existing infrastructure, such as streetlights and utility poles, and the modules can contain base stations and antennas to transmit the millimeter-waves to and from other modules.

Backhaul link for distributed antenna system

A distributed antenna system is provided that frequency shifts the output of one or more microcells to a 60 GHz or higher frequency range for transmission to a set of distributed antennas. The cellular band outputs of these microcell base station devices are used to modulate a 60 GHz (or higher) carrier wave, yielding a group of subcarriers on the 60 GHz carrier wave. This group will then be transmitted in the air via analog microwave RF unit, after which it can be repeated or radiated to the surrounding area. The repeaters amplify the signal and resend it on the air again toward the next repeater. In places where a microcell is required, the 60 GHz signal is shifted in frequency back to its original frequency (e.g., the 1.9 GHz cellular band) and radiated locally to nearby mobile devices.

Remote distributed antenna system

Aspects of the subject disclosure may include, for example, a device that facilitates transmitting electromagnetic waves along a surface of a wire that facilitates delivery of electric energy to devices, and sensing a condition that is adverse to the electromagnetic waves propagating along the surface of the wire. Other embodiments are disclosed.

Method and apparatus for sensing a condition in a transmission medium of electromagnetic waves

Aspects of the subject disclosure may include, for example, a system for detecting a fault in a first wire of a power grid that affects a transmission or reception of electromagnetic waves that transport data and that propagate along a surface of the first wire, selecting a backup communication medium from one or more backup communication mediums according to one or more selection criteria, and redirecting the data to the backup communication medium to circumvent the fault. Other embodiments are disclosed.

Method and apparatus that provides fault tolerance in a communication network

A method and apparatus for integrating individual III-V MMICs into a micromachined waveguide package is disclosed. MMICs are screened prior to integration, allowing only known-good die to be integrated, leading to increased yield. The method and apparatus are used to implement a micro-integrated Focal Plane Array (mFPA) technology used for sub millimeter wave (SMMW) cameras, although many other applications are possible. MMICs of different technologies may be integrated into the same micromachined package thus achieving the same level of technology integration as in multi-wafer WLP integration.

Waveguide and semiconductor packaging

In this work, we describe recent advances in InP HEMT and InP HBT technologies that have led to circuits approaching 1 THz. At lower frequencies, these technologies have demonstrated record performance in terms of noise figure (NF), output power, or power-added efficiency (PAE). On the other hand, CMOS-based technologies are dominating semiconductor industry, because they offer high complexity, yield, and integration density. Recent advances in heterogeneous integration enable the combination of compound semiconductor device technologies with CMOS to create complex, compact, and low weight future systems.

Sub-millimeter wave InP technologies and integration techniques

In this paper, we report recent advances on sub-50 nm InP HEMT have achieved new benchmarks of 586 GHz fT and 7 dB amplifier circuit gain at 390 GHz

Sub 50 nm InP HEMT with fT = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications

Broadband sub-millimeter wave technology has received significant attention for potential applications in security, medical, and military imaging. Despite theoretical advantages of reduced size, weight, and power compared to current millimeter wave systems, sub-millimeter wave systems have been hampered by a fundamental lack of amplification with sufficient gain and noise figure properties. We report a broadband pixel operating from 300 to 340 GHz, biased off a single 2 V power supply. Over this frequency range, the amplifiers provide > 40  dB gain and 1.0  THz. The first sub-millimeter wave-based images using active amplification are demonstrated as part of the Joint Improvised Explosive Device Defeat Organization Longe Range Personnel Imager Program. This development and demonstration may bring to life future sub-millimeter-wave and THz applications such as solutions to brownout problems, ultra-high bandwidth satellite communication cross-links, and future planetary exploration missions.

Amplifier based broadband pixel for sub-millimeter wave imaging

An electronic system. The electronic system includes a waveguide structure having a first waveguide-coupling point and a second waveguide-coupling point and an active electronic circuit having a first circuit-coupling point and a second circuit-coupling point. The second waveguide-coupling point is coupled to the first circuit-coupling point; the system is capable of receiving an input signal at the first waveguide-coupling point and transmitting an output signal at the second circuit-coupling point and/or receiving the input signal at the second circuit-coupling point and transmitting the output signal at the first waveguide-coupling point; the input signal and the output signal have frequencies in a terahertz frequency range; and the system is fabricated as a monolithic integrated structure having the waveguide structure fabricated by micromachining and the circuit fabricated monolithically.

Kevin M. Leong

Papers

Waveguide and semiconductor packaging

Sub-millimeter wave InP technologies and integration techniques

Sub 50 nm InP HEMT with fT = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications

Amplifier based broadband pixel for sub-millimeter wave imaging

Monolithically integrated active electronic circuit and waveguide structure for terahertz frequencies