K
Khoi A. Phan
Researcher at Advanced Micro Devices
Publications - 109
Citations - 1563
Khoi A. Phan is an academic researcher from Advanced Micro Devices. The author has contributed to research in topics: Resist & Wafer. The author has an hindex of 21, co-authored 109 publications receiving 1561 citations. Previous affiliations of Khoi A. Phan include GlobalFoundries.
Papers
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Patent
Refractive index system monitor and control for immersion lithography
TL;DR: In this paper, a known grating structure is built upon a substrate and a refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grated structure.
Patent
Apparatus and method for reducing defects in a semiconductor lithographic process
TL;DR: In this article, an arrangement for optimizing a lithographic process forms a pattern on a silicon wafer using a photocluster cell system to simulate an actual processing condition for a semiconductor product.
Patent
Full flow focus exposure matrix analysis and electrical testing for new product mask evaluation
Jeffrey P. Erhardt,Khoi A. Phan +1 more
TL;DR: In this article, a method for new product mask evaluation is provided, which includes a hierarchy of testing layers, each of which produces data that can be employed in detecting defects in a reticle and/or producing a yield analysis.
Patent
Low cost application of oxide test wafer for defect monitor in photolithography process
TL;DR: In this paper, a low cost technique for detecting defects in photolithography processes in a submicron integrated circuit manufacturing environment combines use of a reusable test wafer with in-line processing to monitor defects using a pattern comparator system.
Patent
Defect detection in pellicized reticles via exposure at short wavelengths
TL;DR: In this paper, a system and method for detecting latent defects in a mask or reticle, which defects may vary as a function of radiation at exposure wavelengths, is presented, and a correlation between the inspection results before and after exposure provides an indication of exposurerelated defects, which may include defect growth and/or formation of defects caused by the exposure.