An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

Liquid precursors for the CVD deposition of amorphous carbon films

A method of fabricating a semiconductor device includes preparing a semiconductor wafer having a top surface and a bottom surface. The semiconductor wafer is loaded onto a wafer chuck, and the bottom surface of the loaded semiconductor wafer faces the wafer chuck. A groove is formed in the top surface of the loaded semiconductor wafer by irradiating a second laser onto the top surface, and a reforming region is formed in the loaded semiconductor wafer under the groove by irradiating a first laser through wafer chuck and bottom surface of the semiconductor wafer into a region in which the first laser is focused. The semiconductor wafer is unloaded from the wafer chuck. The bottom surface of the semiconductor wafer is ground to decrease a thickness of the semiconductor wafer. The semiconductor wafer is separated along the groove and the reforming region, thereby forming a plurality of unit chips.

Method of Fabricating Semiconductor Device

A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the invention provides a method for processing a substrate including depositing at least one dielectric layer on a substrate surface, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less, forming amorphous carbon material on the at least one dielectric layer, and removing the one or more amorphous carbon layers by exposing the one or more amorphous carbon layers to a plasma of a hydrogen-containing gas.

Removable amorphous carbon CMP stop

Low dielectric constant porous materials with improved elastic modulus and film hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness, but with a higher dielectric constant. The improvement in elastic modulus is typically greater than or about 100 %, and more typically greater than or about 200 %. The improvement in film hardness is typically greater than or about 50 %. The porous dielectric material is plasma cured for a time between about 15 and about 120 seconds at a temperature less than about 350 °C. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and film hardness as compared to the plasma cured porous dielectric material. The post-plasma treated, plasma cured porous dielectric material has a dielectric constant between about 1.1 and about 3.5 and an improved elastic modulus and film hardness.

Plasma curing process for porous low-k materials

PURPOSE:To satisfactorily isolate between element formation regions and to satisfactorily operate elements formed in the individual element formation regions by a method wherein a high-concentration inversion-preventing layer which has been doped with impurities at high concentration is formed in a region in which the isolation breakdown strength may be degraded. CONSTITUTION:A high-concentration inversion-preventing layer 32 which contains impurities at high concentration is formed in a region S1 between one pair of contact holes 28 in which there is a fear of the degradation of an isolation breakdown strength. As a result, even when the formation position of the contact holes 28 is dislocated, the isolation breakdown strength between element formation regions 41, 42 is not lowered. In addition, since the high-concentration inversion-preventing layer 32 does not reach the formation region of a gate electrode, a narrow channel effect is not caused. In addition, the concentration of an inversion-preventing layer at the lower part of a field oxide film 2 is not increased in the whole region of a silicon substrate 21, but the high-concentration inversion-preventing layer 32 is formed only locally in a required region. As a result, the contact area of the high-concentration inversion- preventing layer with N type impurity-diffused layers 26, 30 can be suppressed to be small.

Semiconductor device and its manufacture

This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin This results in a film having a dielectric constant of below 27 This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 27 wherein the insulating layer is produced by the method of this invention

Semiconductor device and method for the fabrication thereof

Organosiloxane compositions that cure by a platinum catalyzed hydrosilylation reaction and cohesively bond to plastics that they are in contact with during curing contain an adhesion promoter consisting essentially of a first organosilicon compound containing both silicon-bonded unsaturated and silicon-bonded alkoxy groups, a second organosilicon compound containing both silicon-bonded epoxy and silicon-bonded alkoxy groups, and an aluminum compound or zirconium compound.

Organosiloxane compositions exhibiting improved adhesion

Silicone grease compositions are prepared by blending a thickening agent with a liquified crosslinked organosiloxane gel produced using a platinum-catalyzed hydrosilylation reaction. The gel is liquified by application of a shearing force to the crosslinked gel. The shearing force can be applied prior to and/or during blending of the gel with the thickener.

Silicone grease composition and method for preparing same

To provide a composition and process for forming insulating films that can produce insulating films having low dielectric constants. The composition comprises (A) an electrically insulating curable inorganic or organic resin, (B) a solvent, and (C) at least one solvent-soluble substance (excluding the solvent used for component (B)) that upon heating or by interaction with the resin (A) can generate gas or undergo volatilization in the temperature range from 0° C. to 800° C. The insulating films are prepared by coating the surface of a substrate the composition; evaporating the solvent; and subsequently heating the substrate in order to generate gas from component (C) during the course of or after the cure of the said resin (A).

Kiyotaka Sawa

Papers

Semiconductor device and its manufacture

Semiconductor device and method for the fabrication thereof

Organosiloxane compositions exhibiting improved adhesion

Silicone grease composition and method for preparing same

Composition and process for forming electrically insulating thin films