A method of fabricating a semiconductor device includes preparing a semiconductor wafer having a top surface and a bottom surface. The semiconductor wafer is loaded onto a wafer chuck, and the bottom surface of the loaded semiconductor wafer faces the wafer chuck. A groove is formed in the top surface of the loaded semiconductor wafer by irradiating a second laser onto the top surface, and a reforming region is formed in the loaded semiconductor wafer under the groove by irradiating a first laser through wafer chuck and bottom surface of the semiconductor wafer into a region in which the first laser is focused. The semiconductor wafer is unloaded from the wafer chuck. The bottom surface of the semiconductor wafer is ground to decrease a thickness of the semiconductor wafer. The semiconductor wafer is separated along the groove and the reforming region, thereby forming a plurality of unit chips.

Method of Fabricating Semiconductor Device

Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs).

Tungsten feature fill

A semiconductor integrated circuit has a central processing unit and a rewritable nonvolatile memory area disposed in an address space of the central processing unit. The nonvolatile memory area has a first nonvolatile memory area and a second nonvolatile memory area, which memorize information depending on the difference of threshold voltages. The first nonvolatile memory area has the maximum variation width of a threshold voltage for memorizing information set larger than that of the second nonvolatile memory area. When the maximum variation width of the threshold voltage for memorizing information is larger, since stress to a memory cell owing to a rewrite operation of memory information becomes larger, it is inferior in a point of guaranteeing the number of times of rewrite operation; however, since a read current becomes larger, a read speed of memory information can be expedited. The first nonvolatile memory area can be prioritized to expedite a read speed of the memory information and the second nonvolatile memory area can be prioritized in guaranteeing the number of times of rewrite operation of memory information more.

Semiconductor Integrated circuit

A nonvolatile memory transistor with multi values being capable of suppressing a short channel effect is provided. In an active region of a memory transistor, stripe-shaped impurity regions (pinning regions) are formed in a channel length direction. The pinning regions suppress the spread of a depletion layer of a drain region, and a short channel effect caused by fine processing. Furthermore, in a memory transistor using pinning regions, by assigning one value or one bit of data to each channel forming region, the memory transistor is allowed to have multi values. More specifically, the present invention has a configuration in which a floating gate electrode is provided on each of a plurality of channel forming regions via a first gate insulating film, and an electric potential can be applied independently to a plurality of pinning regions.

Nonvolatile memory and semiconductor device

Disclosed are a semiconductor integrated circuit device and a method of manufacturing the same capable of realizing the two-level gate insulator process for the DRAM without increasing the number of manufacturing steps and that of photomasks. After forming a gate electrode of a MISFET which constitutes a memory cell in a memory array region on a semiconductor substrate, the substrate is subjected to thermal treatment (re-oxidation process). At this time, since bird's beak of the thick gate insulating film formed below the sidewall portion of the gate electrode penetrates into the center of the gate electrode, a gate insulating film thicker than the gate insulating film before the re-oxidation process is formed just below the center of the gate electrode. Meanwhile, since the gate electrode in the peripheral circuit region has a gate length longer than that of the gate electrode in the memory array region, the thickness of the gate insulating film just below the center thereof is almost equal to that before the re-oxidation process.

Semiconductor integrated circuit device and manufacturing method thereof

PURPOSE:To satisfactorily isolate between element formation regions and to satisfactorily operate elements formed in the individual element formation regions by a method wherein a high-concentration inversion-preventing layer which has been doped with impurities at high concentration is formed in a region in which the isolation breakdown strength may be degraded. CONSTITUTION:A high-concentration inversion-preventing layer 32 which contains impurities at high concentration is formed in a region S1 between one pair of contact holes 28 in which there is a fear of the degradation of an isolation breakdown strength. As a result, even when the formation position of the contact holes 28 is dislocated, the isolation breakdown strength between element formation regions 41, 42 is not lowered. In addition, since the high-concentration inversion-preventing layer 32 does not reach the formation region of a gate electrode, a narrow channel effect is not caused. In addition, the concentration of an inversion-preventing layer at the lower part of a field oxide film 2 is not increased in the whole region of a silicon substrate 21, but the high-concentration inversion-preventing layer 32 is formed only locally in a required region. As a result, the contact area of the high-concentration inversion- preventing layer with N type impurity-diffused layers 26, 30 can be suppressed to be small.

Semiconductor device and its manufacture

PURPOSE: To form a dense ceramic-like silicon oxide film free from cracks and pinholes by forming a coating film based on a silicon resin having a specified compsn. on the surface of a substrate and heating the substrate in an atmosphere of gaseous oxygen. CONSTITUTION: A coating film based on a silicon resin represented by a general formula (HR 2 Si0 1/2 ) x (SiO 4/2 ) 1.0 . (where R is H, alkyl or aryl and 0.1≤x≤(2.0) is formed on the surface of a substrate. The silicon resin preferably has about ≤100,00Owt. average mol.wt. and about ≤400°C softening point. Chloroplatinic acid, an acidic catalyst, alcohol, low molecular siloxane, etc., are used as other components of the coating film. The substrate with the formed coating film is then heated in an atmosphere contg. ≥20vol.% gaseous oxygen to convert the coating film into the objective ceramic-like silicon oxide film. COPYRIGHT: (C)1994,JPO&Japio

Formation of silicon oxide film

PURPOSE: To form silicon oxide films that do not dissolve in organic solvents and that do not have cracks or pinholes at high film thicknesses by forming a hydrogensilsesquioxane resin film on the surface of the substrate and then heating the substrate with the formed resin film in an inert gas atmosphere. CONSTITUTION: A hydrogensilsesquioxane resin film is formed as the base material on the surface of the semiconductor device. Next, the substrate, etc., with the resin film formed is heated in an inert gas atmosphere and the hydrogensilsesquioxane resin is converted into pre-ceramic silicon oxide. Subsequently, the substrate, etc., with the pre-ceramic silicon oxide film formed is heated in an oxygen gas or a mixed gas atmosphere until the amount of the hydrogen atoms bonded to silicon atoms in the formed silicon oxide is less than 80% of the amount of hydrogen atoms bonded to silicon atoms in the hydrogensilsesquioxane resin. In this manner, the pre-ceramic silicon oxide is converted into ceramic silicon oxide. COPYRIGHT: (C)1994,JPO&Japio

Method of forming silicon oxide film

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacture of the same having an electrical insulation layer superior to the deposition planalizability on the wiring structure on the substrate. SOLUTION: The semiconductor comprises a cured hydrogen silsesquioxane resin having at least 45 weight % of hydrogen silsesquioxane of less than molecular weight 1500, and an underlying insulation layer 2 formed by thin film mainly made from silica, and interlayer insulation layer 4 and 7. These insulation layers 2, 4, and 7 are formed with coating films made by applying the liquid comprising hydrogen silsesquioxane resin having at least 45 weight % of hydrogen silsesquioxane resin of less than molecular weight 1500 and solution to the semiconductor substrate 1, the lower layer wiring 3a, 3b, and 3c, and the upper layer wiring 6a and 6b, and by curing under exposure to high energy beam. COPYRIGHT: (C)1998,JPO

Semiconductor device and manufacture of the same

PURPOSE:To fractionate the molecular weight of a polyhydrogensilsesquioxane, having an optional molecular weight and excellent in storage stability with good reproducibility. CONSTITUTION:A polyhydrogensilsesquioxane is dissolved in a nonpolar solvent without any active hydrogen and a polar solvent without any active hydrogen is then added to the resultant solution to settle and remove the polyhydrogensilsesquioxane having a molecular weight exceeding the objective average molecular weight. The polar solvent is further added to the solution after removing the polyhydrogensilsesquioxane to settle the polyhydrogensilsesquioxane having the objective molecular weight. Thereby, the objective polyhydrogensilsesquioxane is obtained.

Sasaki Motoi

Papers

Semiconductor device and its manufacture

Formation of silicon oxide film

Method of forming silicon oxide film

Semiconductor device and manufacture of the same

Method for fractionating molecular weight of polyhydrogensilsesquioxane