PROBLEM TO BE SOLVED: To provide a stencil mask which can improve mechanical strength and heat resistance and has superior working accuracy, and to provide a method of manufacturing the same. SOLUTION: The stencil mask includes a supporting layer, a reinforcing layer and a membrane layer 1, wherein a reinforcing layer 2 of an opening excludes a supporting substrate layer 5, and a membrane layer opening formed of a membrane layer excludes a part of the reinforcing layer in a multilayer membrane layer composed of a membrane layers. The area of the reinforcing layer 2 and the membrane layer opening is larger than a stencil pattern area wherein the membrane layer is removed like a pattern. The stencil pattern is formed in a pattern area, and the reinforcing and the membrane layer are made of silicon. COPYRIGHT: (C)2010,JPO&INPIT

Stencil mask and method of manufacturing the same

PROBLEM TO BE SOLVED: To provide a transferring mask for charged particles which can correct a location of a circuit pattern transferred on a wafer by locating a non-penetration pattern for measuring a coordinate of a position in a margin area (skirt portion) within a self-supporting membrane, to provide a method of manufacturing it, and to provide a method of transferring using the transferring mask for the charged particles. SOLUTION: In the transferring mask 100 for the charged particles, the self-supporting membrane 13a is formed on a supporting frame 11a and a beam 11b through an intermediate oxide film 12, and in the self-supporting membrane 13a, a stencil (opening) transferring pattern 14 and a non-penetration pattern 15a for measuring a coordinate of a position formed of recesses or a non-penetration pattern 51a for measuring a coordinate of a position formed of protrusions in the margin area (skirt portion). COPYRIGHT: (C)2007,JPO&INPIT

Transferring mask for charged particle, method of manufacturing it, and method of transferring using transferring mask for charged particle

PROBLEM TO BE SOLVED: To provide a mask for charged particle beam exposure capable of performing automatic focus even in a mask of a multilayer film structure and highly accurately measuring mask distortion, and an inspection method thereof. SOLUTION: The mask for charged particle beam exposure is provided with a strut section having a beam structure, a membrane section provided on the main surface of the strut section and consisting of a first thin film formed in such a way that a pattern to be transferred onto a substrate is divided into a plurality of collective exposure small regions, an intermediate layer made of a second thin film provided between the membrane section and the strut section, and a position mark provided on the main surface of the strut section. In the mask, the position mark has an eliminating section in which the first and second thin films are eliminated, and a projecting section having a laminate structure consisting of the first and second thin films, and the center point of the position mark is positioned at the eliminating section. COPYRIGHT: (C)2006,JPO&NCIPI

Koike Kaoru

Papers

Mask for charged particle beam exposure and mask inspection method